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参数资料
| 型号： | HY5PS1G831CLFP-C4 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 1Gb DDR2 SDRAM |
| 中文描述： | 128M X 8 DDR DRAM, 0.5 ns, PBGA60 |
| 封装： | ROHS COMPLIANT, FBGA-60 |
| 文件页数： | 4/37页 |
| 文件大小： | 539K |
| 代理商： | HY5PS1G831CLFP-C4 |
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Rev. 0.2 / Dec 2006
4
HY5PS1G431C(L)FP
HY5PS1G831C(L)FP
HY5PS1G1631C(L)FP
1.1 Device Features & Ordering Information
1.1.1 Key Features
VDD = 1.8V +/- 0.1V
VDDQ = 1.8V +/- 0.1V
All inputs and outputs are compatible with SSTL_18 interface
8 banks
Fully differential clock inputs (CK, /CK) operation
Double data rate interface
Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
Differential Data Strobe (DQS, DQS)
Data outputs on DQS, DQS edges when read (edged DQ)
Data inputs on DQS centers when write(centered DQ)
On chip DLL align DQ, DQS and DQS transition with CK transition
DM mask write data-in at the both rising and falling edges of the data strobe
All addresses and control inputs except data, data strobes and data masks latched on the rising
edges of the clock
Programmable CAS latency 3, 4, 5 and 6 supported
Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
Programmable burst length 4/8 with both nibble sequential and interleave mode
Internal eight bank operations with single pulsed RAS
Auto refresh and self refresh supported
tRAS lockout supported
8K refresh cycles /64ms
JEDEC standard 60ball FBGA(x4/x8) , 84ball FBGA(x16)
Full strength driver option controlled by EMRS
On Die Termination supported
Off Chip Driver Impedance Adjustment supported
Read Data Strobe supported (x8 only)
Self-Refresh High Temperature Entry
Operating Frequency
Ordering Information
Part No.
Configuration
Package
HY5PS1G431C(L)FP-XX*
256Mx4
60 Ball
HY5PS1G831C(L)FP-XX*
128Mx8
HY5PS1G1631C(L)FP-XX*
64Mx16
84 Ball
Grade
tCK(ns)
CL
tRCD
tRP
Unit
E3
5
3
3
3
Clk
C4
3.75
4
4
4
Clk
Y5
3
5
5
5
Clk
S5
2.5
5
5
5
Clk
Note:
-XX* is the speed bin, refer to the Operation Frequency table for complete Part No.
1. Description
相关PDF资料 |
PDF描述 |
|---|---|
| HY5PS1G831CLFP-E3 | 1Gb DDR2 SDRAM |
| HY5PS1G831CLFP-S5 | 1Gb DDR2 SDRAM |
| HY5PS1G831CLFP-Y5 | 1Gb DDR2 SDRAM |
| HY5PS1G821LM-E3 | 1Gb DDR2 SDRAM(DDP) |
| HY5PS1G821M | 1Gb DDR2 SDRAM(DDP) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5PS1G831CLFP-E3 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G831CLFP-S5 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G831CLFP-Y5 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G831F | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G831F-C4 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
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