参数资料
型号: HY5V28CLF-S
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54
封装: 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
文件页数: 12/14页
文件大小: 128K
代理商: HY5V28CLF-S
HY5V28C(L)F
Rev. 0.1/Sep.01
8
DC CHARACTERISTICS II (TA=0 to 70°C, VDD=3.3
±0.3V, VSS=0V)
Note :
1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.
2.Min. of tRRC (Refresh RAS cycle time) is applied to HY5V28C(L)F-6/K/H/8/P/S which are listed on AC characteristic II.
3.HY5V28CF-6/K/H/8/P/S
4.HY5V28CLF-6/K/H/8/P/S
Parameter
Symbol
Test Condition
Speed
Unit
Note
-6
-K
-H
-8
-P
-S
Operating Current
IDD1
Burst length=1, One bank active
tRC
≥ tRC(min), IOL=0mA
120
110
100
mA
1
Precharge Standby Current
in Power Down Mode
IDD2P
CKE
≤ VIL(max), tCK = 15ns
2
mA
IDD2PS
CKE
≤ VIL(max), tCK =
1
Precharge Standby Current
in Non Power Down Mode
IDD2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
Input signals are changed one time during
30ns. All other Balls
≥ VDD-0.2V or ≤ 0.2V
15
mA
IDD2NS
CKE
≥ VIH(min), tCK =
Input signals are stable.
15
Active Standby Current
in Power Down Mode
IDD3P
CKE
≤ VIL(max), tCK = 15ns
5
mA
IDD3PS
CKE
≤ VIL(max), tCK =
5
Active Standby Current
in Non Power Down Mode
IDD3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
Input signals are changed one time during
30ns. All other Balls
≥ VDD-0.2V or ≤ 0.2V
30
mA
IDD3NS
CKE
≥ VIH(min), tCK =
Input signals are stable.
20
Burst Mode Operating
Current
IDD4
tCK
≥ tCK(min), IOL=0mA
All banks active
CL=3
140
120
110
mA
1
CL=2
150
130
110
Auto Refresh Current
IDD5
tRRC
≥ tRRC(min), All banks active
240
220
200
mA
2
Self Refresh Current
IDD6
CKE
≤ 0.2V
2mA
3
800
uA
4
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