参数资料
型号: HYMD18M645AL6-K
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 8M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
封装: 67.60 X 31.75 X 1 MM, SODIMM-200
文件页数: 11/16页
文件大小: 232K
代理商: HYMD18M645AL6-K
HYMD18M645A(L)6-K/H/L
Rev. 0.5/May. 02
4
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Note :
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. The value of VREF is approximately equal to 0.5VDDQ.
AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Note :
1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of V IX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
oC
Storage Temperature
TSTG
-55 ~ 125
oC
Voltage on Any Pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD relative to VSS
VDD
-0.5 ~ 3.6
V
Voltage on VDDQ relative to VSS
VDDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
IOS
50
mA
Power Dissipation
PD
8W
Soldering Temperature
Time
TSOLDER
260
10
oC Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
VDD
2.3
2.5
2.7
V
Power Supply Voltage
VDDQ
2.3
2.5
2.7
V
1
Input High Voltage
VIH
VREF + 0.15
-
VDDQ + 0.3
V
Input Low Voltage
VIL
-0.3
-
VREF - 0.15
V
2
Termination Voltage
VTT
VREF - 0.04
VREF
VREF + 0.04
V
Reference Voltage
VREF
1.15
1.25
1.35
V
3
Parameter
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
VIL(AC)
VREF - 0.31
V
Input Differential Voltage, CK and /CK inputs
VID(AC)
0.7
VDDQ + 0.6
V
1
Input Crossing Point Voltage, CK and /CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
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