参数资料
型号: IBM0116165
厂商: IBM Microeletronics
英文描述: 1M x 16 12/8 EDO DRAM(16M位 动态RAM(超页面模式读写并带20条地址线,其中12条为行地址选通,8条为列地址选通))
中文描述: 100万× 16 12 / 8 EDO公司的DRAM(1,600位动态随机存储器(超页面模式读写并带20条地址线,其中12条为行地址选通,8条为列地址选通))
文件页数: 9/31页
文件大小: 553K
代理商: IBM0116165
IBM0116165
IBM0116165B IBM0116165P
1M x 16 12/8 EDO DRAM
IBM0116165M
28H4723
SA14-4225-06
Revised 4/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 9 of 31
Read Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
RAC
Access Time from RAS
50
60
ns
1, 2, 3
t
CAC
Access Time from CAS
13
15
ns
1, 3
t
AA
Access Time from Address
25
30
ns
2, 3
t
OEA
Access Time from OE
13
15
ns
3
t
RCS
Read Command Setup Time
0
0
ns
t
RCH
Read Command Hold Time to CAS
0
0
ns
4
t
RRH
Read Command Hold Time to RAS
0
0
ns
4
t
RAL
Column Address to RAS Lead Time
25
30
ns
t
CLZ
CAS to Output in Low-Z
0
0
ns
3
t
OFF
Output Buffer Turn-Off Delay
13
15
ns
5, 6
t
CDD
CAS to D
IN
Delay Time
13
15
ns
7
t
OEZ
Output Buffer Turn-Off Delay from OE
13
15
ns
5
t
OES
OE Setup Time Prior to CAS
5
5
ns
t
ORD
OE Setup Time Prior to RAS (Hidden Refresh)
0
0
ns
1. Operation within the t
RCD
(max.) limit ensures that t
RAC
(max.) can be met. t
RCD
(max.) is specified as a reference point only. If t
RCD
is greater than the specified t
RCD
(max.) limit, then access time is controlled by t
CAC
.
2. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference point only. If t
RAD
is
greater than the specified t
RAD
(max.) limit, then access time is controlled by t
AA
.
3. Measured with the specified current load and 100pF at V
OL
= 0.8V and V
OH
= 2.0V.
4. Either t
RCH
or t
RRH
must be satisfied for a read cycle.
5. t
OFF
(max) and t
OEZ
(max) define the time at which the output achieves the open circuit condition and are not referenced to output
voltage levels.
6. t
OFF
is referenced from the rising edge of RAS or CAS, which ever is last.
7. Either t
CDD
or t
OED
must be satisfied.
Discontinued (9/98 - last order; 3/99 last ship)
相关PDF资料
PDF描述
IBM0116165B 1M x 16 12/8 EDO DRAM(16M位 动态RAM(超页面模式读写并带20条地址线,其中12条为行地址选通,8条为列地址选通))
IBM0116165M 1M x 16 12/8 EDO DRAM(16M位 动态RAM(超页面模式读写并带20条地址线,其中12条为行地址选通,8条为列地址选通))
IBM0116165P 1M x 16 12/8 EDO DRAM(16M位 动态RAM(超页面模式读写并带20条地址线,其中12条为行地址选通,8条为列地址选通))
IBM0116405 4M x 4 12/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通))
IBM0116405B 4M x 4 12/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通))
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