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参数资料
型号： IBM0116165B
厂商： IBM Microeletronics
英文描述： 1M x 16 12/8 EDO DRAM(16M位 动态RAM（超页面模式读写并带20条地址线，其中12条为行地址选通，8条为列地址选通）)
中文描述： 100万× 16 12 / 8 EDO公司的DRAM（1,600位动态随机存储器（超页面模式读写并带20条地址线，其中12条为行地址选通，8条为列地址选通））
文件页数： 1/31页
文件大小： 553K
代理商： IBM0116165B
IBM0116165
IBM0116165B IBM0116165P
1M x 16 12/8 EDO DRAM
IBM0116165M
28H4723
SA14-4225-06
Revised 4/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 31
Features
1,048,576 word by 16 bit organization
Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
Standard Power (SP) and Low Power (LP)
4096 Refresh Cycles
- 64 ms Refresh Rate (SP version)
- 256 ms Refresh Rate (LP version)
High Performance:
-50
-60
Units
t
RAC
RAS Access Time
50
60
ns
t
CAC
CAS Access Time
13
15
ns
t
AA
Column Address Access Time
25
30
ns
t
RC
Cycle Time
84
104
ns
t
HPC
EDO (Hyper Page) Mode Cycle Time
20
25
ns
Low Power Dissipation
- Active (max) - 55 mA / 50 mA
- Standby: TTL Inputs (max) - 1.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.1 mA (LP version)
- Self Refresh (LP version only)
- 200
μ
A (3.3 Volt)
- 300
μ
A (5.0 Volt)
Extended Data Out (Hyper Page) Mode
Dual CAS Byte Read/Write
Read-Modify-Write
RAS Only and CAS before RAS Refresh
Hidden Refresh
Package: TSOP-II 50/44 (400mil x 825mil)
SOJ 42/42 (400mil)
Description
The IBM0116165 is a dynamic RAM organized
1,048,576 words by 16 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5
μ
m
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 20
addresses required to access any bit of data are
multiplexed (12 are strobed with RAS, 8 are strobed
with CAS).
Pin Assignments
(Top View)
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
28
27
26
V
CC
IO0
IO1
IO2
IO3
V
CC
IO4
IO5
IO6
IO7
NC
NC
NC
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
V
SS
IO15
IO14
IO13
IO12
V
SS
IO11
IO10
IO9
IO8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
V
CC
IO0
IO1
IO2
IO3
V
CC
IO4
IO5
IO6
IO7
NC
NC
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
V
SS
IO15
IO14
IO13
IO12
V
SS
IO11
IO10
IO9
IO8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
50/44 TSOP
42/42 SOJ
Pin Description
RAS
Row Address Strobe
LCAS / UCAS
L/U Column Address Strobe
WE
Read/Write Input
A0 - A11
Address Inputs
OE
Output Enable
I/O0 - I/O15
Data Input/Output
V
CC
Power (+3.3V or +5.0V)
V
SS
Ground
IBM01161651M x 1612/8, 5.0V, EDOMMDD61DSU-001015031. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165B1M x 1612/8, 3.3V, EDOMMDD61DSU-001015031.
Discontinued (9/98 - last order; 3/99 last ship)
相关PDF资料
PDF描述
IBM0116165M 1M x 16 12/8 EDO DRAM(16M位 动态RAM（超页面模式读写并带20条地址线，其中12条为行地址选通，8条为列地址选通）)
IBM0116165P 1M x 16 12/8 EDO DRAM(16M位 动态RAM（超页面模式读写并带20条地址线，其中12条为行地址选通，8条为列地址选通）)
IBM0116405 4M x 4 12/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带22条地址线，其中12条为行地址选通，10条为列地址选通）)
IBM0116405B 4M x 4 12/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带22条地址线，其中12条为行地址选通，10条为列地址选通）)
IBM0116405M 4M x 4 12/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带22条地址线，其中12条为行地址选通，10条为列地址选通）)
相关代理商/技术参数
参数描述
IBM0116165BJ3F60 制造商:IBM 功能描述:51H0218
IBM0116405JIE60 制造商:IBM 功能描述:53H2588
IBM0116405PT1F60 制造商:IBM 功能描述:*
IBM01164B0T3F60 制造商:IBM 功能描述:51H0567
IBM01164D0T3F60 制造商:IBM 功能描述:51H0568
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