- 您现在的位置：买卖IC网 > PDF目录378599 > IBM0117805 (IBM Microeletronics) 2M x 8 11/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带21条地址线，其中11条为行地址选通，10条为列地址选通）) PDF资料下载
参数资料
| 型号： | IBM0117805 |
| 厂商： | IBM Microeletronics |
| 英文描述： | 2M x 8 11/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带21条地址线，其中11条为行地址选通，10条为列地址选通）) |
| 中文描述： | 200万× 8 11/10 EDO公司的DRAM（1,600位动态随机存储器（超页面模式读写并带21条地址线，其中11条为行地址选通，10条为列地址选通）） |
| 文件页数： | 30/31页 |
| 文件大小： | 559K |
| 代理商： | IBM0117805 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页当前第30页第31页
IBM0117805
IBM0117805B
2M x 8 11/10 EDO DRAM
IBM0117805M
IBM0117805P
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 30 of 31
28H4724
SA14-4221-06
Revised 4/97
Revision Log
Revision
Contents Of Modification
11/15/95
Initial Release
12/10/95
1. The Low Power and Standard Power Specifications were combined. ES# 43G9060 and ES# 28H4724 were
combined into ES# 28H4724.
2. Added Die Rev E part numbers.
3. A -6R speed sort was added, with the following differences over the -60 speed sort:
-
t
CAC
was increased from 15ns to 17ns for the -6R speed sort
-
t
RCD
(max) was decreased from 45ns to 43ns for the -6R speed sort.
-
t
CWD
was increased from 34ns to 36ns for the -6R speed sort.
-
t
OEA
was increased from 15ns to 17ns for the -6R speed sort.
4. t
CHD
was added to the Self Refresh Cycle with a value of 350
μ
s for all speed sorts.
5. The Self Refresh timing diagram was changed to allow CAS to go high t
CHD
(350
μ
s) after RAS falls entering a
Self Refresh.
6. The CBR timing diagram was changed to allow CAS to remain low for back-to-back CBR cycles.
7. WE for the Hidden Refresh Write cycle in the Truth Table was changed from “L” to “H”.
09/01/96
1. I
CC2
was changed from 2mA to 1mA.
2. I
I(L)
and I
O(L)
were altered from +/- 10uA to +/- 5uA.
3. t
RC
was changed from 89ns to 84ns for the -50 speed sort.
4. t
CSH
changed from 45ns to 38ns, 50ns to 45ns, and 55ns to 50ns for the -50, -60, and -70 speed sorts, respec-
tively.
5. t
T
was initially at a max of 30ns. It has been modified to 50ns for all speed sorts.
6. t
CPA
was decreased from 30ns to 28ns for the -50 speed sort.
7. t
RASP
max of 125K was raised to 200K for all speed sorts.
8. t
OEP
was changed from 10ns to 5ns for all speed sorts.
9. t
OEHC
was also lowered from 10ns to 5ns for all speed sorts.
10. t
RP
was changed from 35ns to 30ns for the -50 speed sort.
03/19/97
1. WE for the Hidden Refresh Write cycle in the Truth Table was changed from “H” to “L
→
H”.
2. t
OED
was moved from the Common Parameters table to the Write Cycle Parameters Table.
3. t
RWC
for the -50 part was changed from 115ns to 100ns.
4. The note “Implementing WE at RAS time during a Read or Write cycle is optional. Doing so will facilitate com-
patibility with future EDO DRAMs.” was removed from all of the Read and Write timing diagrams.
5. t
ODD
in the CAS before RAS timing diagram was renamed t
OED
.
6. The 300mil 28 pin SOJ package was added to the spec.
7. The -6R and -70 speed sorts and timings were removed.
8. I
cc1
, I
cc3
, I
cc6
for the -50 speed sort were reduced from 100mA to 75mA.
9. I
cc4
for the -50 speed sort was reduced from 60mA to 35mA.
10. I
cc1
, I
cc3
, I
cc6
for the -60 speed sort were reduced from 90mA to 60mA.
11. I
cc4
for the -60 speed sort was reduced from 50mA to 30mA.
04/23/97
1. I
cc5
was changed from 200
μ
A to 100
μ
A for the Low Power Die Rev F Parts.
Discontinued (9/98 - last order; 3/99 last ship)
相关PDF资料 |
PDF描述 |
|---|---|
| IBM0117805B | 2M x 8 11/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带21条地址线，其中11条为行地址选通，10条为列地址选通）) |
| IBM0117805M | 2M x 8 11/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带21条地址线，其中11条为行地址选通，10条为列地址选通）) |
| IBM0117805P | 2M x 8 11/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带21条地址线，其中11条为行地址选通，10条为列地址选通）) |
| IBM0118160 | 1M x 16 10/10 DRAM(16M位 动态RAM（带20条地址线，其中10条为行地址选通，10条为列地址选通）) |
| IBM0118160B | 1M x 16 10/10 DRAM(16M位 动态RAM（带20条地址线，其中10条为行地址选通，10条为列地址选通）) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IBM0118160J3F60 | 制造商:IBM 功能描述:51H057 |
| IBM0118165PT3E6R | 制造商:IBM 功能描述:* |
| IBM011816DT3D60 | 制造商:IBM 功能描述:28H4998 |
| IBM0164405BT3D50 | 制造商:IBM 功能描述:20L9262 |
| IBM0165165PT3C50 | 制造商:IBM 功能描述:75H3120 |
发布紧急采购，3分钟左右您将得到回复。