参数资料
型号: IBM0117805P
厂商: IBM Microeletronics
英文描述: 2M x 8 11/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带21条地址线,其中11条为行地址选通,10条为列地址选通))
中文描述: 200万× 8 11/10 EDO公司的DRAM(1,600位动态随机存储器(超页面模式读写并带21条地址线,其中11条为行地址选通,10条为列地址选通))
文件页数: 31/31页
文件大小: 559K
代理商: IBM0117805P
Intern
ational Business Machines Corp.1997
Printed in the United States of America
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Discontinued (9/98 - last order; 3/99 last ship)
相关PDF资料
PDF描述
IBM0118160 1M x 16 10/10 DRAM(16M位 动态RAM(带20条地址线,其中10条为行地址选通,10条为列地址选通))
IBM0118160B 1M x 16 10/10 DRAM(16M位 动态RAM(带20条地址线,其中10条为行地址选通,10条为列地址选通))
IBM0118160M 1M x 16 10/10 DRAM(16M位 动态RAM(带20条地址线,其中10条为行地址选通,10条为列地址选通))
IBM0118160P 1M x 16 10/10 DRAM(16M位 动态RAM(带20条地址线,其中10条为行地址选通,10条为列地址选通))
IBM0118165 1M x 16 10/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带20条地址线,其中10条为行地址选通,10条为列地址选通))
相关代理商/技术参数
参数描述
IBM0118160J3F60 制造商:IBM 功能描述:51H057
IBM0118165PT3E6R 制造商:IBM 功能描述:*
IBM011816DT3D60 制造商:IBM 功能描述:28H4998
IBM0164405BT3D50 制造商:IBM 功能描述:20L9262
IBM0165165PT3C50 制造商:IBM 功能描述:75H3120