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| 型号： | ICS841S012DKILF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 3/23页 |
| 文件大小： | 0K |
| 描述： | IC FREQ SYNTHESIZER 56VFQFN |
| 标准包装： | 260 |
| 系列： | HiPerClockS™, PCI Express® (PCIe) |
| 类型： | 时钟/频率合成器，多路复用器 |
| PLL： | 是 |
| 主要目的： | PCI Express（PCIe） |
| 输入： | LVCMOS，LVTTL，晶体 |
| 输出： | HCSL，LVCMOS，LVTTL |
| 电路数： | 1 |
| 比率 - 输入:输出： | 2:12 |
| 差分 - 输入:输出： | 是/无 |
| 频率 - 最大： | 250MHz |
| 电源电压： | 3.135 V ~ 3.465 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 56-VFQFN 裸露焊盘 |
| 供应商设备封装： | 56-VFQFP-EP（8x8） |
| 包装： | 托盘 |
ICS841S012BKI REVISION A NOVEMBER 10, 2009
11
2009 Integrated Device Technology, Inc.
ICS841S012I Data Sheet
CRYSTAL-TO-0.7V DIFFERENTIAL HCSL/LVCMOS FREQUENCY SYNTHESIZER
FIGURE 3. GENERAL DIAGRAM FOR LVCMOS DRIVER TO XTAL INPUT INTERFACE
LVCMOS TO XTAL INTERFACE
The XTAL_IN input can accept a single-ended LVCMOS signal
through an AC coupling capacitor. A general interface diagram is
shown in
Figure 3. The XTAL_OUT pin can be left floating. The
input edge rate can be as slow as 10ns. For LVCMOS signals, it is
recommended that the amplitude be reduced from full swing to
half swing in order to prevent signal interference with the power
rail and to reduce noise. This configuration requires that the output
impedance of the driver (Ro) plus the series resistance (Rs)
equals the transmission line impedance. In addition, matched
termination at the crystal input will attenuate the signal in half.
This can be done in one of two ways. First, R1 and R2 in parallel
should equal the transmission line impedance. For most 50
Ω
applications, R1 and R2 can be 100
Ω. This can also be
accomplished by removing R1 and making R2 50
Ω. By overdriving
the crystal oscillator, the device will be functional, but note the
device performance is guaranteed by using a quartz crystal.
R2
Zo = 50
VDD
Ro
Zo = Ro + Rs
R1
VDD
XTAL_IN
XTAL_OUT
.1uf
Rs
CRYSTAL INPUT INTERFACE
The ICS841S012I has been characterized with 18pF parallel
resonant crystals. The capacitor values shown in
Figure 2 below
were determined using a 25MHz, 18pF parallel resonant crystal
FIGURE 2. CRYSTAL INPUT INTERFACE
and were chosen to minimize the ppm error. NOTE: External tun-
ing capacitors must be used for proper operations.
XTAL_IN
XTAL_OUT
X1
18pF Parallel Crystal
C1
15p
C2
22p
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ICS841S012DKILFT | 功能描述:IC FREQ SYNTHESIZER 56VFQFN RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 专用 系列:HiPerClockS™, PCI Express® (PCIe) 标准包装:1,500 系列:- 类型:时钟缓冲器/驱动器 PLL:是 主要目的:- 输入:- 输出:- 电路数:- 比率 - 输入:输出:- 差分 - 输入:输出:- 频率 - 最大:- 电源电压:3.3V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:28-SSOP（0.209"，5.30mm 宽） 供应商设备封装:28-SSOP 包装:带卷 (TR) 其它名称:93786AFT |
| ICS841S012I | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:Crystal-to-0.7V Differential HCSL/LVCMOS Frequency Synthesizer |
| ICS841S01BG | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:PCI EXPRESS⑩ CLOCK GENERATOR |
| ICS841S01BGLF | 功能描述:IC CLK GENERATOR PLL 16-TSSOP RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 专用 系列:HiPerClockS™, PCI Express® (PCIe) 标准包装:1 系列:- 类型:时钟/频率发生器，多路复用器 PLL:是 主要目的:存储器，RDRAM 输入:晶体 输出:LVCMOS 电路数:1 比率 - 输入:输出:1:2 差分 - 输入:输出:无/是 频率 - 最大:400MHz 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:16-TSSOP 包装:Digi-Reel® 其它名称:296-6719-6 |
| ICS841S01BGLFT | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:PCI EXPRESS⑩ CLOCK GENERATOR |
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