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参数资料
| 型号： | IDT6116SA20TPGI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 20NS 24DIP |
| 标准包装： | 15 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 16K (2K x 8) |
| 速度： | 20ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 24-PDIP |
| 包装： | 管件 |
| 其它名称： | 6116SA20TPGI |
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Recommended Operating
Temperature and Supply Voltage
Military, Commercial, and Industrial Temperature Ranges
Recommended DC
Operating Conditions
-0.5
5.5
Grade
Military
Industrial
Commercial
Ambient
Temperature
-55 O C to +125 O C
-40 O C to +85 O C
0 O C to +70 O C
GND
0V
0V
0V
Vcc
5.0V ± 10%
5.0V ± 10%
5.0V ± 10%
3089 tbl 05
Symbol
V CC
GND
V IH
V IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
(1)
Typ.
5.0
0
3.5
____
Max.
(2)
0
V CC +0.5
0.8
Unit
V
V
V
V
DC Electrical Characteristics
(V CC = 5.0V ± 10%)
NOTES:
1. V IL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
2. V IN must not exceed V CC +0.5V.
3089 tbl 06
IDT6116SA
IDT6116LA
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
|I LI |
|I LO |
V OL
V OH
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
V CC = Max.,
V IN = GND to V CC
V CC = Max., CS = V IH ,
V OUT = GND to V CC
I OL = 8mA, V CC = Min.
I OH = -4mA, V CC = Min.
MIL.
COM'L & IND
MIL.
COM'L & IND
____
____
____
____
____
2.4
10
5
10
5
0.4
____
____
____
____
____
____
2.4
5
2
5
2
0.4
____
μA
μA
V
V
3089 tbl 07
DC Electrical Characteristics (1)
(V CC = 5.0V ± 10%, V LC = 0.2V, V HC = V CC - 0.2V)
6116SA15
6116SA20
6116LA20
6116SA25
6116LA25
123Symbol
I CC1
I CC2
I SB
I SB1
Parameter
Operating Power Supply Current
CS < V IL , Outputs Open
V CC = Max., f = 0
Dynamic Operating Current
CS < V IL , Outputs Open
V CC = Max., f = f MAX (2)
Standby Power Supply Current
(TTL Level)
CS > V IH , Outputs Open
V CC = Max., f = f MAX (2)
Full Standby Power Supply Current
(CMOS Level)
CS > V HC , V CC = Max.,
V IN < V LC or V IN > V HC , f = 0
Power
SA
LA
SA
LA
SA
LA
SA
LA
Com'l
Only
105
_____
150
_____
40
_____
2
_____
Com'l
& Ind
105
95
130
120
40
35
2
0.1
Mil
130
120
150
140
50
45
10
0.9
Com'l
& Ind
100
95
120
110
40
35
2
0.1
Mil
90
85
135
125
45
40
10
0.9
Unit
mA
mA
mA
mA
NOTES:
1. All values are maximum guaranteed values.
2. f MAX = 1/t RC , only address inputs are cycling at f MAX, f = 0 means address inputs are not changing.
3
6.42
3089 tbl 08
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相关代理商/技术参数 |
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| IDT6116SA20TPI | 功能描述:IC SRAM 16KBIT 20NS 24DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT6116SA20Y | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA20YB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA20YI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA25D | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
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