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参数资料
| 型号： | IDT6116SA20TPGI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 9/11页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 20NS 24DIP |
| 标准包装： | 15 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 16K (2K x 8) |
| 速度： | 20ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 24-PDIP |
| 包装： | 管件 |
| 其它名称： | 6116SA20TPGI |
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 1 ( WE Controlled Timing) (1,2,5,7)
t WC
ADDRESS
t AW
CS
t AS
t WP (7)
t WR
( 3 )
t CHZ
(6)
WE
t WHZ
DATA OUT
PREVIOUS DATA VALID
(4)
(6)
t OW
(6)
DATA (4)
VALID
t DW
t DH
DATA IN
DATA VALID
3089 drw 09
,
Timing Waveform of Write Cycle No. 2 ( CS Controlled Timing) (1,2,3,5,7)
t WC
ADDRESS
t AW
CS
WE
t AS
t CW
t WR (3)
t DW
t DH
DATA IN
DATA VALID
3089 drw 10
,
NOTES:
1. WE or CS must be HIGH during all address transitions.
2. A write occurs during the overlap of a LOW CS and a LOW WE .
3. t WR is measured from the earlier of CS or WE going HIGH to the end of the write cycle.
4. During this period, the I/O pins are in the output state and the input signals must not be applied.
5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.
6. Transition is measured ±500mV from steady state.
7. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of t WP or (t WHZ + t DW ) to allow the I/O drivers
to turn off and data to be placed on the bus for the required t DW . If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the write pulse
is the specified t WP . For a CS controlled write cycle, OE may be LOW with no degradation to t CW .
9
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| IDT6116SA20TPI | 功能描述:IC SRAM 16KBIT 20NS 24DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT6116SA20Y | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA20YB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA20YI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA25D | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
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