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参数资料
| 型号： | IDT7006L55G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/20页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 128KBIT 55NS 68PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 128K (16K x 8) |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-BPGA |
| 供应商设备封装： | 68-PGA（29.46x29.46） |
| 包装： | 托盘 |
| 其它名称： | 7006L55G |
IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM
Description
The IDT7006 is a high-speed 16K x 8 Dual-Port Static RAM. The
IDT7006 is designed to be used as a stand-alone 128K-bit Dual-Port RAM
or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more
word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach
in 16-bit or wider memory system applications results in full-speed, error-
free operation without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by CE permits the on-chip circuitry of each port to enter
Pin Configurations (1,2,3)
Military, Industrial and Commercial Temperature Ranges
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 750mW of power. Low-power (L)
versions offer battery backup data retention capability with typical power
consumption of 500μW from a 2V battery.
The IDT7006 is packaged in a ceramic 68-pin PGA, an 68-pin quad
flatpack, a PLCC, and a 64-pin thin quad flatpack, TQFP. Military grade
product is manufactured in compliance with the latest revision of MIL-PRF-
38535 QML, Class B, making it ideally suited to military temperature
applications demanding the highest level of performance and reliability.
INDEX
11/06/01
9
8
7
6
5
4
3
2
1 68 67 66 65 64 63 62 61
I/O 2L
I/O 3L
I/O 4L
I/O 5L
GND
10
11
12
13
14
60
59
58
57
56
A 5L
A 4L
A 3L
A 2L
A 1L
I/O 6L
I/O 7L
V CC
15
16
17
IDT7006J or F
J68-1 (4)
F68-1 (4)
55
54
53
A 0L
INT L
BUSY L
GND
I/O 0R
I/O 1R
I/O 2R
V CC
I/O 3R
I/O 4R
I/O 5R
I/O 6R
18
19
20
21
22
23
24
25
26
68 Pin PLCC / Flatpack
Top View (5)
52
51
50
49
48
47
46
45
44
GND
M/ S
BUSY R
INT R
A 0R
A 1R
A 2R
A 3R
A 4R
.
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
2739 drw 02
11/06/01
INDEX
I/O 2L
I/O 3L
I/O 4L
I/O 5L
1
2
3
4
48
47
46
45
A 4L
A 3L
A 2L
A 1L
GND
I/O 6L
I/O 7L
V CC
GND
I/O 0R
I/O 1R
I/O 2R
V CC
5
6
7
8
9
10
11
12
13
7006PF
PN-64 (4)
64 Pin TQFP
Top View (5)
44
43
42
41
40
39
38
37
36
A 0L
INT L
BUSY L
GND
M/ S
BUSY R
INT R
A 0R
A 1R
NOTES:
1. All V CC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. J68-1 package body is approximately .95 in x .95 in. x .17 in.
I/O 3R
I/O 4R
I/O 5R
14
15
16
35
34
33
A 2R
A 3R
A 4R
F68-1 package body is approximately .97 in x .97 in x .08 in.
PN64-1 package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking
2
2739 drw 03
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IdT7006L55GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 55NS 68PGA |
| IDT7006L55J | 功能描述:IC SRAM 128KBIT 55NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7006L55J8 | 功能描述:IC SRAM 128KBIT 55NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7006L55JB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
| IDT7006L55L68 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
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