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| 型号： | IDT7015L35G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 4/20页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 72KBIT 35NS 68PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 72K（8K x 9） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-BPGA |
| 供应商设备封装： | 68-PGA（29.46x29.46） |
| 包装： | 托盘 |
| 其它名称： | 7015L35G |
IDT7015S/L
High-Speed 8K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs (1)
Outputs
CE
H
L
L
X
R/ W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
I/O 0-8
High-Z
DATA IN
DATA OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
Mode
NOTE:
1. Condition: A 0L — A 12L = A 0R — A 12R
Truth Table II: Semaphore Read/Write CONTROL (1)
2954 tbl 02
Inputs (1)
Outputs
CE
H
H
L
R/ W
H
↑
X
OE
L
X
X
SEM
L
L
L
I/O 0-8
DATA OUT
DATA IN
____
Mode
Read Semaphore Flag Data Out (I/O 0-8 )
Write I/O 0 into Semaphore Flag
Not Allowed
NOTE:
1. There are eight semaphore flags written to via I/O 0 and read from all I/O s (I/O 0 - I/O 8 ). These eight semaphores are addressed by A 0 - A 2 .
2954 tbl 03
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
Unit
Maximum Operating
Temperature and Supply Voltage (1)
& Industrial
Grade
Ambient
GND
Vcc
V TERM (2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
Military
Temperature
-55 O C to +125 O C
0V
5.0V + 10%
T BIAS
Temperature
-55 to +125
-65 to +135
o
C
Commercial
0 O C to +70 O C
0V
5.0V + 10%
Under Bias
Industrial
-40 O C to +85 O C
0V
5.0V + 10%
T STG
Storage
Temperature
-65 to +150
-65 to +150
o
C
NOTES:
2954 tbl 05
I OUT
DC Output
50
50
mA
1. This is the parameter T A . There is the "instant on" case temperature.
Current
NOTES:
2954 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
Recommended DC Operating
Conditions
to absolute maximum rating conditions for extended periods may affect
Symbol
Parameter
Min.
Typ.
Max.
Unit
reliability.
6.0
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
V CC
GND
V IH
Supply Voltage
Ground
Input High Voltage
4.5
0
2.2
5.0
0
____
5.5
0
(2)
V
V
V
V IL
Input Low Voltage
-0.5
(1)
____
0.8
V
NOTES:
1. V IL > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
6.42
2954 tbl 06
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7015L35GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015L35GI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015L35J | 功能描述:IC SRAM 72KBIT 35NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7015L35J8 | 功能描述:IC SRAM 72KBIT 35NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7015L35JB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
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