参数资料
型号: IDT7015L35G
厂商: IDT, Integrated Device Technology Inc
文件页数: 7/20页
文件大小: 0K
描述: IC SRAM 72KBIT 35NS 68PGA
标准包装: 3
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 72K(8K x 9)
速度: 35ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 68-BPGA
供应商设备封装: 68-PGA(29.46x29.46)
包装: 托盘
其它名称: 7015L35G
IDT7015S/L
High-Speed 8K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (4)
7015X12
Com'l Only
7015X15
Com'l Only
7015X17
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
t RC
t AA
Read Cycle Time
Address Access Time
12
____
____
12
15
____
____
15
17
____
____
17
ns
ns
t ACE
Chip Enable Access Time
(3)
____
12
____
15
____
17
ns
t AOE
t OH
t LZ
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time (1,2)
____
3
3
8
____
____
____
3
3
10
____
____
____
3
3
10
____
____
ns
ns
ns
t HZ
Output High-Z Time
(1,2)
____
10
____
10
____
10
ns
t PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
t PD
t SOP
t SAA
Chip Disable to Power Down Time (2)
Semaphore Flag Update Pulse ( OE or SEM )
Semaphore Address Access Time
____
10
____
12
____
12
____
10
____
15
____
15
____
10
____
17
____
17
ns
ns
ns
2954 tbl 12a
7015X20
Com'l. Ind
& Military
7015X25
Com'l &
Military
7015X35
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
t RC
t AA
t ACE
t AOE
t OH
Read Cycle Time
Address Access Time
Chip Enable Access Time (3)
Output Enable Access Time
Output Hold from Address Change
20
____
____
____
3
____
20
20
12
____
25
____
____
____
3
____
25
25
13
____
35
____
____
____
3
____
35
35
20
____
ns
ns
ns
ns
ns
t LZ
Output Low-Z Time
(1,2)
3
____
3
____
3
____
ns
t HZ
t PU
Output High-Z Time (1,2)
Chip Enable to Power Up Time (2)
____
0
12
____
____
0
15
____
____
0
20
____
ns
ns
t PD
Chip Disable to Power Down Time
(2)
____
20
____
25
____
35
ns
t SOP
t SAA
Semaphore Flag Update Pulse ( OE or SEM )
Semaphore Address Access Time
10
____
____
20
10
____
____
25
15
____
____
35
ns
ns
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with load (Figures 1 and 2).
2. This parameter is guaranteed by device characterization but not tested.
3. To access RAM, CE = V IL and SEM = V IH . To access semaphore, CE = V IH and SEM = V IL .
4. 'X' in part numbers indicates power rating (S or L).
7
6.42
2954 tbl 12b
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