- 您现在的位置：买卖IC网 > Datasheet目录328 > IDT7016L35G (IDT, Integrated Device Technology Inc)IC SRAM 144KBIT 35NS 68PGA Datasheet资料下载
参数资料
| 型号： | IDT7016L35G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 14/20页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 144KBIT 35NS 68PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 144K（16K x 9） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-BPGA |
| 供应商设备封装： | 68-PGA（29.46x29.46） |
| 包装： | 托盘 |
| 其它名称： | 7016L35G |
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Waveform of BUSY Arbitration Controlled by CE Timing (1) (M/ S = V IH )
ADDR "A"
and "B"
CE "A"
CE "B"
t APS (2)
t BAC
ADDRESSES MATCH
t BDC
BUSY "B"
3190 drw 15
Waveform of BUSY Arbitration Cycle Controlled by Address Match
Timing (1) (M/ S = V IH )
ADDR "A"
ADDR "B"
t APS
(2)
ADDRESS "N"
MATCHING ADDRESS "N"
t BAA
t BDA
BUSY "B"
3190 drw 16
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. If t APS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (1)
7016X12
Com'l Only
7016X15
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
INTERRUPT TIMING
t AS
t WR
t INS
t INR
Address Set-up Time
Write Recovery Time
Interrupt Set Time
Interrupt Reset Time
0
0
____
____
____
____
12
12
0
0
____
____
____
____
15
15
ns
ns
ns
ns
3190 tbl 15a
7016X20
Com'l, Ind
& Military
7016X25
Com'l &
Military
7016X35
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
INTERRUPT TIMING
t AS
t WR
t INS
t INR
Address Set-up Time
Write Recovery Time
Interrupt Set Time
Interrupt Reset Time
0
0
____
____
____
____
20
20
0
0
____
____
____
____
20
20
0
0
____
____
____
____
25
25
ns
ns
ns
ns
NOTES:
1. 'X' in part numbers indicates power rating (S or L).
14
6.42
3190 tbl 15b
相关PDF资料 |
PDF描述 |
|---|---|
| IDT7019L20PFI | IC SRAM 1.125MBIT 20NS 100TQFP |
| IDT7024L55G | IC SRAM 64KBIT 55NS 84PGA |
| IDT7025L55G | IC SRAM 128KBIT 55NS 84PGA |
| IDT70261L20PFI | IC SRAM 256KBIT 20NS 100TQFP |
| IDT7026L20G | IC SRAM 256KBIT 20NS 84PGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7016L35GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35GG | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35J | 功能描述:IC SRAM 144KBIT 35NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
发布紧急采购，3分钟左右您将得到回复。