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参数资料
| 型号： | IDT7016L35G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/20页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 144KBIT 35NS 68PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 144K（16K x 9） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-BPGA |
| 供应商设备封装： | 68-PGA（29.46x29.46） |
| 包装： | 托盘 |
| 其它名称： | 7016L35G |
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Description
The IDT7016 is a high-speed 16K x 9 Dual-Port Static RAM. The
IDT7016 is designed to be used as stand-alone Dual-Port RAMs or as
a combination MASTER/SLAVE Dual-Port RAM for 18-bit-or-more wider
systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 18-
bit or wider memory system applications results in full-speed, error-free
operation without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
Pin Configurations (1,2,3)
11/19/01
INDEX
Military, Industrial and Commercial Temperature Ranges
feature controlled by CE permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 750mW of power.
The IDT7016 is packaged in a ceramic 68-pin PGA, a 64-pin PLCC
and an 80-pinTQFP (Thin Quad Flatpack). Military grade product is
manufactured in compliance with the latest revision of MIL-PRF-38535
QML, making it ideally suited to military temperature applications demand-
ing the highest level of performance and reliability.
9
8
7
6
5
4
3
2
1 68 67 66 65 64 63 62 61
I/O 2L
I/O 3L
I/O 4L
I/O 5L
GND
10
11
12
13
14
60
59
58
57
56
A 5L
A 4L
A 3L
A 2L
A 1L
I/O 6L
I/O 7L
V CC
GND
I/O 0R
I/O 1R
I/O 2R
V CC
I/O 3R
I/O 4R
I/O 5R
I/O 6R
15
16
17
18
19
20
21
22
23
24
25
26
IDT7016J
J68-1(4)
68-Pin PLCC
Top View(5)
55
54
53
52
51
50
49
48
47
46
45
44
A 0L
INT L
BUSY L
GND
M/ S
BUSY R
INT R
A 0R
A 1R
A 2R
A 3R
A 4R
,
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
3190 drw 02
Pin Names (7016)
NOTES:
1. All V CC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately .95 in x .95 in x .17 in.
4. This package code is used to reference the package diagram.
5. This text does not imply orientation of Part-marking.
Left Port
CE L
R/ W L
OE L
A 0L - A 13L
I/O 0L - I/O 8L
SEM L
INT L
BUSY L
Right Port
CE R
R/ W R
OE R
A 0R - A 13R
I/O 0R - I/O 8R
SEM R
INT R
BUSY R
M/ S
V CC
GND
Names
Chip Enable
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Interrupt Flag
Busy Flag
Master or Slave Select
Power
Ground
3190 tbl 01
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7016L35GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35GG | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35J | 功能描述:IC SRAM 144KBIT 35NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
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