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参数资料
| 型号： | IDT7016L35G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 9/20页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 144KBIT 35NS 68PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 144K（16K x 9） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-BPGA |
| 供应商设备封装： | 68-PGA（29.46x29.46） |
| 包装： | 托盘 |
| 其它名称： | 7016L35G |
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (5)
7016X12
Com'l Only
7016X15
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
t WC
Write Cycle Time
12
____
15
____
ns
t EW
Chip Enable to End-of-Write
(3)
10
____
12
____
ns
t AW
Address Valid to End-of-Write
10
____
12
____
ns
t AS
Address Set-up Time
(3)
0
____
0
____
ns
t WP
t WR
t DW
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
10
2
10
____
____
____
12
2
10
____
____
____
ns
ns
ns
t HZ
Output High-Z Time
(1,2)
____
10
____
10
ns
t DH
Data Hold Time
(4)
0
____
0
____
ns
Write Enable to Output in High-Z
t WZ
(1,2)
____
10
____
10
ns
t OW
t SWRD
t SPS
Output Active from End-of-Write
SEM Flag Write to Read Time
SEM Flag Contention Window
(1,2,4)
3
5
5
____
____
____
3
5
5
____
____
____
ns
ns
ns
3190 tbl 13a
7016X20
Com'l, Ind
& Military
7016X25
Com'l &
Military
7016X35
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
t WC
Write Cycle Time
20
____
25
____
35
____
ns
t EW
Chip Enable to End-of-Write
(3)
15
____
20
____
30
____
ns
t AW
Address Valid to End-of-Write
15
____
20
____
30
____
ns
t AS
Address Set-up Time
(3)
0
____
0
____
0
____
ns
t WP
t WR
t DW
t HZ
t DH
t WZ
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time (1,2)
Data Hold Time (4)
Write Enable to Output in High-Z (1,2)
15
2
15
____
0
____
____
____
____
12
____
12
20
2
15
____
0
____
____
____
____
15
____
15
25
2
15
____
0
____
____
____
____
20
____
20
ns
ns
ns
ns
ns
ns
t OW
t SWRD
t SPS
Output Active from End-of-Write
SEM Flag Write to Read Time
SEM Flag Contention Window
(1,2,4)
3
5
5
____
____
____
3
5
5
____
____
____
3
5
5
____
____
____
ns
ns
ns
NOTES:
3190 tbl 13b
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM, CE = V IL and SEM = V IH . To access semaphore, CE = V IH and SEM = V IL . Either condition must be valid for the entire t EW time.
4. The specification for t DH must be met by the device supplying write data to the RAM under all operating conditions. Although t DH and t OW values will vary over voltage
and temperature, the actual t DH will always be smaller than the actual t OW .
5. 'X' in part numbers indicates power rating (S or L).
9
6.42
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相关代理商/技术参数 |
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|---|---|
| IDT7016L35GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35GG | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35J | 功能描述:IC SRAM 144KBIT 35NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
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