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| 型号： | IDT7038L15PFG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 5/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1024KBIT 15NS 120TQFP |
| 标准包装： | 12 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 1.125M（64K x 18） |
| 速度： | 15ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
IDT7038L
High-Speed 64K x 18 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (2) (V CC = 5.0V ± 10%)
7038L
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
CE = V IH , V OUT = 0V to V CC
I OL = 4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
4837 tbl 09
NOTES:
1. At Vcc < 2.0V, input leakages are undefined.
2. Refer to Chip Enable Truth Table.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1) (V CC = 5.0V ± 10%)
7038L15
Com'l Only
7038L20
Com'l & Ind
Symbol
Parameter
Test Condition
Version
Typ. (1) Max
Typ. (1) Max
Unit
I CC
I SB1
I SB2
I SB3
I SB4
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL Level
Inputs)
Standby Current
(One Port - TTL Level
Inputs)
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (2)
CE L = CE R = V IH
SEM R = SEM L = V IH
f = f MAX (2)
CE "A" = V IL and CE "B" = V IH (4)
Active Port Outputs Disabled,
f=f MAX (2) , SEM R = SEM L = V IH
Both Ports CE L and
CE R > V CC - 0.2V, V IN > V CC - 0.2V
or V IN < 0.2V, f = 0 (3)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (4) ,
SEM R = SEM L > V CC - 0.2V,
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
L
L
L
L
L
L
L
L
L
220
____
65
____
145
____
0.2
____
135
340
____
100
____
225
____
3.0
____
220
200
200
50
50
130
130
0.2
0.2
120
300
360
75
120
195
235
3.0
3.0
190
mA
mA
mA
mA
mA
V IN > V CC - 0.2V or V IN < 0.2V,
Active Port Outp uts Disabled , f = f MAX (2)
IND
L
____
____
120
230
NOTES:
4837 tbl 10
1. V CC = 5V, T A = +25°C, and are not production tested. I CCDC = 120mA (Typ.)
2. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/ t RC, and using “AC Test Conditions” of input
levels of GND to 3V.
3. f = 0 means no address or control lines change.
4. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
5. Refer to Chip Enable Truth Table.
5
6.42
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相关代理商/技术参数 |
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| IDT7038L15PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP |
| IDT7038L20PF | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7038L20PF8 | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7038L20PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
| IDT7038L20PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
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