参数资料
型号: IDT70T633S10BC8
厂商: IDT, Integrated Device Technology Inc
文件页数: 15/27页
文件大小: 0K
描述: IC SRAM 9MBIT 10NS 256BGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 9M(512K x 18)
速度: 10ns
接口: 并联
电源电压: 2.4 V ~ 2.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 带卷 (TR)
其它名称: 70T633S10BC8
IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Semaphore Read after Write Timing, Either Side (1)
t SAA
A 0 -A 2
VALID ADDRESS
VALID ADDRESS
DATA OUT (2)
SEM (1)
I/O
t AW
t WR
t EW
t DW
DATA IN VALID
t SOP
t ACE
t OH
VALID
R/ W
t AS
t WP
t DH
OE
t SWRD
t SOP
t SOE
Write Cycle
Read Cycle
5670 drw 12
.
NOTES:
1. CE 0 = V IH and CE 1 = V IL are required for the duration of both the write cycle and the read cycle waveforms shown above. Refer to Truth Table II for details and for
appropriate UB / LB controls.
2. "DATA OUT VALID" represents all I/O's (I/O 0 - I/O 17 ) equal to the semaphore value.
Timing Waveform of Semaphore Write Contention (1,3,4)
A 0"A" -A 2"A"
MATCH
SIDE
SIDE
(2)
(2)
"A"
"B"
R/ W "A"
SEM "A"
A 0"B" -A 2"B"
R/ W "B"
SEM "B"
t SPS
MATCH
5670 drw 13 .
NOTES:
1. D OR = D OL = V IL , CE 0L = CE 0R = V IH ; CE 1L = CE 1R = V IL . Refer also to Truth Table II for appropriate UB / LB controls.
2. All timing is the same for left and right ports. Port "A" may be either left or right port. "B" is the opposite from port "A".
3. This parameter is measured from R/ W "A" or SEM "A" going HIGH to R/ W "B" or SEM "B" going HIGH.
4. If t SPS is not satisfied,the semaphore will fall positively to one side or the other, but there is no guarantee which side will be granted the semaphore flag.
15
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