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| 型号： | IDT70T633S10BC8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 7/27页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 9MBIT 10NS 256BGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 9M（512K x 18） |
| 速度： | 10ns |
| 接口： | 并联 |
| 电源电压： | 2.4 V ~ 2.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 256-LBGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 带卷 (TR) |
| 其它名称： | 70T633S10BC8 |
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IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage (1)
Recommended DC Operating
Conditions with V DDQ at 2.5V
Ambient
Symbol
Parameter
Min.
Typ.
Max.
Unit
0 C to +70 C
Grade
Commercial
Industrial
Temperature
O O
-40 O C to +85 O C
GND
0V
0V
V DD
2.5V + 100mV
2.5V + 100mV
V DD
V DDQ
V SS
Core Supply Voltage
I/O Supply Voltage (3)
Ground
2.4
2.4
0
2.5
2.5
0
2.6
2.6
0
V
V
V
Absolute Maximum Ratings
NOTE:
1. This is the parameter T A . This is the "instant on" case temperature.
(1)
5670 tbl 04
V IH
V IH
V IH
V IL
Input High Voltage
(Address, Control &
Data I/O Inputs) (3)
Input High Voltage _
JTAG
Input High Voltage -
ZZ, OPT, M/ S
Input Low Voltage
1.7
1.7
V DD - 0.2V
-0.3 (1)
____
____
____
____
V DDQ + 100mV (2)
V DD + 100mV (2)
V DD + 100mV (2)
0.7
V
V
V
V
-0.3
Symbol
Rating
Commercial
& Industrial
Unit
V IL
Input Low Voltage -
ZZ, OPT, M/ S
(1)
____
0.2
V
V TERM
(V DD )
V TERM (2)
(V DDQ )
V TERM(2)
(INPUTS and I/O's)
V DD Terminal Voltage
with Respect to GND
V DDQ Terminal Voltage
with Respect to GND
Input and I/O Terminal
Voltage with Respect to GND
-0.5 to 3.6
-0.3 to V DDQ + 0.3
-0.3 to V DDQ + 0.3
V
V
V
5670 tbl 05
NOTES:
1. V IL (min.) = -1.0V for pulse width less than t RC /2 or 5ns, whichever is less.
2. V IH (max.) = V DDQ + 1.0V for pulse width less than t RC /2 or 5ns, whichever is
less.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V SS (0V), and V DDQX for that port must be
supplied as indicated above.
T BIAS (3)
Temperature
-55 to +125
o
C
Under Bias
T STG
Storage
-65 to +150
o
C
C
Temperature
T JN Junction Temperature
I OUT (For V DDQ = 3.3V) DC Output Current
+150
50
o
mA
Recommended DC Operating
Conditions with V DDQ at 3.3V
Symbol Parameter Min. Typ. Max.
Unit
I OUT (For V DDQ = 2.5V) DC Output Current
40
mA
V DD
Core Supply Voltage
2.4
2.5
2.6
V
5670 tbl 07
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
V DDQ
V SS
V IH
V IH
I/O Supply Voltage
Ground
Input High Voltage
(Address, Control
&Data I/O Inputs) (3)
Input High Voltage
JTAG
(3)
_
3.15
0
2.0
1.7
3.3
0
____
____
3.45
0
V DDQ + 150mV (2)
V DD + 100mV (2)
V
V
V
V
however, the voltage on any Input or I/O pin cannot exceed V DDQ during power
supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
V IH
V IL
Input High Voltage -
ZZ, OPT, M/ S
Input Low Voltage
V DD - 0.2V
-0.3 (1)
____
____
V DD + 100mV (2)
0.8
V
V
Capacitance
Symbol
Parameter
Conditions
-0.3 (1)
V IL
0.2
V
(1)
(T A = +25°C, F = 1.0MH Z ) TQFP ONLY
(2)
Max.
Unit
Input Low Voltage - ____
ZZ, OPT, M/ S
5670 tbl 06
NOTES:
1. V IL (min.) = -1.0V for pulse width less than t RC /2 or 5ns, whichever is less.
2. V IH (max.) = V DDQ + 1.0V for pulse width less than t RC /2 or 5ns, whichever is
C OUT
C IN
(3)
Input Capacitance
Output Capacitance
V IN = 3dV
V OUT = 3dV
8
10.5
pF
pF
less.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V DD (2.5V), and V DDQX for that port must be
supplied as indicated above.
NOTES:
5670 tbl 08
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. C OUT also references C I/O .
7
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| IDT70T633S10BCGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 10NS 256CABGA |
| IDT70T633S10BCI | 功能描述:IC SRAM 9MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T633S10BCI8 | 功能描述:IC SRAM 9MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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