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| 型号： | IDT70T659S10BC |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 21/27页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 10NS 256BGA |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 10ns |
| 接口： | 并联 |
| 电源电压： | 2.4 V ~ 2.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 256-LBGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 托盘 |
| 其它名称： | 70T659S10BC |
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IDT70T651/9S
High-Speed 2.5V 256/128K x 36 Asynchronous Dual-Port Static RAM
Truth Table IV —
Address BUSY Arbitration
Industrial and Commercial Temperature Ranges
Inputs
Outputs
CE L (5) CE R (5)
A OL -A 17L (4)
A OR -A 17R
BUSY L (1)
BUSY R (1)
Function
X
H
X
L
X
X
H
L
NO MATCH
MATCH
MATCH
MATCH
H
H
H
(2)
H
H
H
(2)
Normal
Normal
Normal
Write Inhibit (3)
NOTES:
5632 tbl 18
1. Pins BUSY L and BUSY R are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY outputs on the
IDT70T651/9 are push-pull, not open drain outputs. On slaves the BUSY input internally inhibits writes.
2. "L" if the inputs to the opposite port were stable prior to the address and enable inputs of this port. "H" if the inputs to the opposite port became stable after the address
and enable inputs of this port. If t APS is not met, either BUSY L or BUSY R = LOW will result. BUSY L and BUSY R outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSY L outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored
when BUSY R outputs are driving LOW regardless of actual logic level on the pin.
4. A 17 is a NC for IDT70T659. Address comparison will be for A 0 - A 16 .
5. CE X = L means CE 0X = V IL and CE 1X = V IH . CE X = H means CE 0X = V IH and/or CE 1X = V IL .
Truth Table V — Example of Semaphore Procurement Sequence (1,2,3)
Functions
No Action
Left Port Writes "0" to Semaphore
Right Port Writes "0" to Semaphore
Left Port Writes "1" to Semaphore
Left Port Writes "0" to Semaphore
Right Port Writes "1" to Semaphore
Left Port Writes "1" to Semaphore
Right Port Writes "0" to Semaphore
Right Port Writes "1" to Semaphore
Left Port Writes "0" to Semaphore
Left Port Writes "1" to Semaphore
NOTES:
D 0 - D 35 Left
1
0
0
1
1
0
1
1
1
0
1
D 0 - D 35 Right
1
1
1
0
0
1
1
0
1
1
1
Status
Semaphore free
Left port has semaphore token
No change. Right side has no write access to semaphore
Right port obtains semaphore token
No change. Left port has no write access to semaphore
Left port obtains semaphore token
Semaphore free
Right port has semaphore token
Semaphore free
Left port has semaphore token
Semaphore free
5632 tbl 19
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70T651/9.
2. There are eight semaphore flags written to via I/O 0 and read from all I/O's (I/O 0 -I/O 35 ). These eight semaphores are addressed by A 0 - A 2 .
3. CE = V IH , SEM = V IL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table.
Functional Description
The IDT70T651/9 provides two ports with separate control, address
and I/O pins that permit independent access for reads or writes to any
location in memory. The IDT70T651/9 has an automatic power down
feature controlled by CE . The CE 0 and CE 1 control the on-chip power
down circuitry that permits the respective port to go into a standby mode
when not selected ( CE = HIGH). When a port is enabled, access to the
entire memory array is permitted.
Interrupts
If the user chooses the interrupt function, a memory location (mail
21
box or message center) is assigned to each port. The left port interrupt
flag ( INT L ) is asserted when the right port writes to memory location
3FFFE (HEX), where a write is defined as CE R = R/ W R = V IL per the
Truth Table. The left port clears the interrupt through access of
address location 3FFFE when CE L = OE L = V IL , R/ W is a "don't care".
Likewise, the right port interrupt flag ( INT R ) is asserted when the left port
writes to memory location 3FFFF (HEX) and to clear the interrupt
flag ( INT R ), the right port must read the memory location 3FFFF. The
message (36 bits) at 3FFFE or 3FFFF (1FFFF or 1FFFE for IDT70T659)
is user-defined since it is an addressable SRAM location. If the interrupt
function is not used, address locations 3FFFE and 3FFFF are not used
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| IDT70T659S10BC8 | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T659S10BCI | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T659S10BCI8 | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T659S10BF | 功能描述:IC SRAM 4MBIT 10NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T659S10BF8 | 功能描述:IC SRAM 4MBIT 10NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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