参数资料
型号: IDT70V25L25PFGI
厂商: IDT, Integrated Device Technology Inc
文件页数: 21/25页
文件大小: 0K
描述: IC SRAM 128KBIT 25NS 100TQFP
标准包装: 45
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 128K(8K x 16)
速度: 25ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
产品目录页面: 1254 (CN2011-ZH PDF)
其它名称: 70V25L25PFGI
800-1389
IDT70V35/34S/L (IDT70V25/24S/L)
Truth Table III — Interrupt Flag
High-Speed 3.3V 8/4K x 18 (8/4K x 16) Dual-Port Static RAM
(1)
Left Port
Industrial and Commercial Temperature Ranges
Right Port
A 12R -A 0R
R/ W L
CE L
OE L
A 12L -A 0L
(4)
INT L
R/ W R
CE R
OE R
(4)
INT R
Function
L
X
L
X
X
X
1FFF (4)
X
X
X
X
X
X
L
X
L
X
1FFF (4)
L (2)
H (3)
Set Right INT R Flag
Reset Right INT R Flag
L
X
X
X
X
(3)
L
L
X
1FFE
(4)
X
Set Left INT L Flag
H
X
L
L
1FFE
(4)
(2)
X
X
X
X
X
Reset Left INT L Flag
NOTES:
1. Assumes BUSY L = BUSY R = V IH .
2. If BUSY L = V IL , then no change.
3. If BUSY R = V IL , then no change.
4. A 12 is a NC for IDT70V34 and for IDT70V24, therefore Interrupt Addresses are FFF and FFE.
Truth Table IV — Address BUSY
Arbitration
5624 tbl 15
Inputs
Outputs
A 12L -A 0L
CE L
X
H
X
L
CE R
X
X
H
L
(4)
A 12R -A 0R
NO MATCH
MATCH
MATCH
MATCH
BUSY L (1)
H
H
H
Note (2)
BUSY R (1)
H
H
H
Note (2)
Function
Normal
Normal
Normal
Write Inhibit (3)
NOTES:
5624 tbl 16
1. Pins BUSY L and BUSY R are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY outputs on the
IDT70V35/34 (IDT70V25/24) are push pull, not open drain outputs. On slaves the BUSY input internally inhibits writes.
2. L if the inputs to the opposite port were stable prior to the address and enable inputs of this port. V IH if the inputs to the opposite port became stable after the
address and enable inputs of this port. If t APS is not met, either BUSY L or BUSY R = LOW will result. BUSY L and BUSY R outputs cannot be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSY L outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally
ignored when BUSY R outputs are driving LOW regardless of actual logic level on the pin.
4. A 12 is a NC for IDT70V34 and for IDT70V24. Address comparison will be for A 0 - A 11 .
Truth Table V — Example of Semaphore Procurement Sequence (1,2,3)
Functions
No Action
Left Port Writes "0" to Semaphore
Right Port Writes "0" to Semaphore
Left Port Writes "1" to Semaphore
Left Port Writes "0" to Semaphore
Right Port Writes "1" to Semaphore
Left Port Writes "1" to Semaphore
Right Port Writes "0" to Semaphore
Right Port Writes "1" to Semaphore
Left Port Writes "0" to Semaphore
Left Port Writes "1" to Semaphore
NOTES:
D 0 - D 17 Left (2)
1
0
0
1
1
0
1
1
1
0
1
D 0 - D 17 Right (2)
1
1
1
0
0
1
1
0
1
1
1
Status
Semaphore free
Left port has semaphore token
No change. Right side has no write access to semaphore
Right port obtains semaphore token
No change. Left port has no write access to semaphore
Left port obtains semaphore token
Semaphore free
Right port has semaphore token
Semaphore free
Left port has semaphore token
Semaphore free
5624 tbl 17
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V35/34 (IDT70V25/24).
2. There are eight semaphore flags written to via I/O 0 and read from all I/O's (I/O 0 -I/O 17 for IDT70V35/34) and (I/O 0 -I/O 15 for IDT70V25/24). These eight semaphores
are addressed by A 0 -A 2 .
3. CE = V IH , SEM = V IL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Tables.
21
6.42
相关PDF资料
PDF描述
ACB75DHFT CONN EDGECARD 150POS .050 SMD
ABB75DHFT CONN EDGECARD 150POS .050 SMD
ACB40DHBN CONN EDGECARD 80POS R/A .050 DIP
ACB40DHBD CONN EDGECARD 80POS R/A .050 DIP
RSM44DRKF-S13 CONN EDGECARD 88POS .156 EXTEND
相关代理商/技术参数
参数描述
IDT70V25L25PFGI8 功能描述:IC SRAM 128KBIT 25NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V25L25PFI 功能描述:IC SRAM 128KBIT 25NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(单线) 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商设备封装:8-MSOP 包装:带卷 (TR)
IDT70V25L25PFI8 功能描述:IC SRAM 128KBIT 25NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V25L35G 功能描述:IC SRAM 128KBIT 35NS 84PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V25L35J 功能描述:IC SRAM 128KBIT 35NS 84PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF