- 您现在的位置：买卖IC网 > PDF目录4460 > IDT70V3599S166BFG (IDT, Integrated Device Technology Inc)IC SRAM 4MBIT 166MHZ 208FPBGA PDF资料下载
参数资料
| 型号： | IDT70V3599S166BFG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 166MHZ 208FPBGA |
| 标准包装： | 7 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 166MHz |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 208-LFBGA |
| 供应商设备封装： | 208-CABGA（15x15） |
| 包装： | 托盘 |
| 产品目录页面： | 1254 (CN2011-ZH PDF) |
| 其它名称： | 70V3599S166BFG 800-1396 |
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I—Read/Write and Enable Control (1,2,3,4)
Byte 3
Byte 2
Byte 1
Byte 0
OE
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
CLK
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
CE 0
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
CE 1
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
BE 3
X
X
H
H
H
H
L
H
L
L
H
H
H
L
H
L
L
L
BE 2
X
X
H
H
H
L
H
H
L
L
H
H
L
H
H
L
L
L
BE 1
X
X
H
H
L
H
H
L
H
L
H
L
H
H
L
H
L
L
BE 0
X
X
H
L
H
H
H
L
H
L
L
H
H
H
L
H
L
L
R/ W
X
X
X
L
L
L
L
L
L
L
H
H
H
H
H
H
H
X
I/O 27-35
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D IN
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
D OUT
High-Z
I/O 18-26
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
D IN
High-Z
High-Z
D OUT
High-Z
High-Z
D OUT
D OUT
High-Z
I/O 9-17
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
High-Z
D IN
High-Z
D OUT
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
I/O 0-8
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D OUT
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
MODE
Deselected –Power Down
Deselected –Power Down
All Bytes Deselected
Write to Byte 0 Only
Write to Byte 1 Only
Write to Byte 2 Only
Write to Byte 3 Only
Write to Lower 2 Bytes Only
Write to Upper 2 bytes Only
Write to All Bytes
Read Byte 0 Only
Read Byte 1 Only
Read Byte 2 Only
Read Byte 3 Only
Read Lower 2 Bytes Only
Read Upper 2 Bytes Only
Read All Bytes
Outputs Disabled
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. ADS , CNTEN , REPEAT = X.
3. OE is an asynchronous input signal.
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
Truth Table II—Address Counter Control (1,2)
5617 tbl 02
Previous
Internal
L
L
External
Address
X
An
An
X
Internal
Address
X
X
Ap
Ap
Address
Used
An
An
Ap
Ap + 1
CLK
↑
↑
↑
↑
ADS
X
(4)
H
H
CNTEN
X
X
H
(5)
REPEAT (6)
L (4)
H
H
H
I/O (3)
D I/O (0)
D I/O (n)
D I/O (p)
D I/O (p+1)
MODE
Counter Reset to last valid ADS load
External Address Used
External Address Blocked —Counter disabled (Ap reused)
Counter Enabled —Internal Address generation
NOTES:
5617 tbl 03
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/ W , CE 0 , CE 1 , BE n and OE .
3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the date out will be delayed by one cycle.
4. ADS and REPEAT are independent of all other memory control signals including CE 0 , CE 1 and BE n
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other memory control signals including CE 0 , CE 1 , BE n.
6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS . This value is not set at power-up: a known location should be loaded
via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location.
6.42
相关PDF资料 |
PDF描述 |
|---|---|
| M1AFS600-FGG484 | IC FPGA 4MB FLASH 600K 484-FBGA |
| AFS600-FG484 | IC FPGA 4MB FLASH 600K 484FBGA |
| A1020B-1PLG44C | IC FPGA 2K GATES 44-PLCC COM |
| A1020B-1PL44C | IC FPGA 2K GATES 44-PLCC COM |
| A54SX16P-TQ144 | IC FPGA SX 24K GATES 144-TQFP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V3599S166BFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 166MHZ 208FPBGA |
| IDT70V3599S166DR | 功能描述:IC SRAM 4MBIT 166MHZ 208QFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3599S166DRG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 166MHZ 208PQFP |
| IDT70V35L15PF | 功能描述:IC SRAM 144KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V35L15PF8 | 功能描述:IC SRAM 144KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
发布紧急采购，3分钟左右您将得到回复。