参数资料
型号: IDT70V631S12PRF
厂商: IDT, Integrated Device Technology Inc
文件页数: 1/23页
文件大小: 0K
描述: IC SRAM 4MBIT 12NS 128TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 4.5M(256K x 18)
速度: 12ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 128-LQFP
供应商设备封装: 128-TQFP(14x20)
包装: 托盘
其它名称: 70V631S12PRF
800-2315
IDT70V631S12PRF-ND
HIGH-SPEED 3.3V 256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
IDT70V631S
True Dual-Port memory cells which allow simultaneous
High-speed access
Dual chip enables allow for depth expansion without
IDT70V631 easily expands data bus width to 36 bits or
M/ S = V IH for BUSY output flag on Master,
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
Features
access of the same memory location
– Commercial: 10/12/15ns (max.)
– Industrial: 12ns (max.)
external logic
more using the Master/Slave select when cascading more
than one device
M/ S = V IL for BUSY input on Slave
between ports
Functional Block Diagram
UB L
LB L
R/ W L
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package.
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 128-pin Thin Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
UB R
LB R
R/ W R
B
E
B
E
B
E
B
E
CE 0L
0
L
1
L
1
R
0
R
CE 0 R
CE 1L
OE L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
CE 1 R
OE R
256K x 18
MEMORY
ARRAY
I/O 0L - I/O 17L
Din_L
Din_R
I/O 0R - I/O 17R
A 17L
A 0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A 17R
A 0R
OE L
ARBITRATION
OE R
CE 0L
CE 1L
R/ W L
INTERRUPT
SEMAPHORE
LOGIC
R/ W R
CE 0 R
CE 1 R
BUSY L
BUSY R
SEM L
INT L
TDI
TDO
M/ S
JTAG
TMS
TCK
TRST
SEM R
INT R
5622 drw 01
NOTES:
1. BUSY is an input as a Slave (M/ S =V IL ) and an output when it is a Master (M/ S =V IH ).
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).
?2013 Integrated Device Technology, Inc.
1
OCTOBER 2013
DSC-5622/7
相关PDF资料
PDF描述
M1A3PE3000-1FGG484I IC FPGA 1KB FLASH 3M 484-FBGA
IDT70V3599S133BCI IC SRAM 4MBIT 133MHZ 256BGA
A3PE3000-1FG484I IC FPGA 1KB FLASH 3M 484-FBGA
A3PE3000-1FGG484I IC FPGA 1KB FLASH 3M 484-FBGA
EP1S20F780C6N IC STRATIX FPGA 20K LE 780-FBGA
相关代理商/技术参数
参数描述
IDT70V631S12PRF8 功能描述:IC SRAM 4MBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V631S12PRFGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 12NS 128TQFP
IDT70V631S12PRFI 功能描述:IC SRAM 4MBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(单线) 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商设备封装:8-MSOP 包装:带卷 (TR)
IDT70V631S12PRFI8 功能描述:IC SRAM 4MBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V631S15BC 功能描述:IC SRAM 4MBIT 15NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)