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参数资料
| 型号： | IDT70V631S12PRF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 7/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 12NS 128TQFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 4.5M（256K x 18） |
| 速度： | 12ns |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 128-LQFP |
| 供应商设备封装： | 128-TQFP（14x20） |
| 包装： | 托盘 |
| 其它名称： | 70V631S12PRF 800-2315 IDT70V631S12PRF-ND |
IDT70V631S
High-Speed 3.3V 256K x 18 Asynchronous Dual-Port Static RAM
Recommended Operating
Temperature and Supply Voltage (1)
Industrial and Commercial Temperature Ranges
Recommended DC Operating
Conditions with V DDQ at 2.5V
Ambient
Symbol
Parameter
Min.
Typ.
Max.
Unit
Grade
Temperature
GND
V DD
V DD
Core Supply Voltage
3.15
3.3
3.45
V
0 C to +70 C
-40 C to +85 C
Commercial
Industrial
O O
O O
0V
0V
3.3V + 150mV
3.3V + 150mV
V DDQ
V SS
I/O Supply Voltage
Ground
(3)
2.4
0
2.5
0
2.6
0
V
V
Input High Voltage
NOTE:
1. This is the parameter T A . This is the "instant on" case temperature.
5622 tbl 04
V IH
(3)
(Address & Control Inputs)
1.7
____
V DDQ + 100mV
(2)
V
-0.5
V IH
V IL
Input High Voltage - I/O (3)
Input Low Voltage
1.7
(1)
____
____
V DDQ + 100mV (2)
0.7
V
V
NOTES:
5622 tbl 06
Absolute Maximum Ratings (1)
Symbol Rating Commercial
& Industrial
Unit
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V IL (0V), and V DDQX for that port must be supplied
as indicated above.
V TERM (2)
Terminal Voltage
-0.5 to +4.6
V
with Respect to
GND
T BIAS
T STG
Temperature
Under Bias
Storage
-55 to +125
-65 to +150
o
o
C
C
Recommended DC Operating
Conditions with V DDQ at 3.3V
Temperature
Symbol
Parameter
Min.
Typ.
Max.
Unit
I OUT
NOTES:
DC Output Current
50
mA
5622 tbl 05
V DD
V DDQ
Core Supply Voltage
(3)
I/O Supply Voltage
3.15
3.15
3.3
3.3
3.45
3.45
V
V
V DDQ + 150mV
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V DD + 150mV for more than 25% of the cycle time or
V SS
V IH
V IH
Ground
Input High Voltage
(Address & Control Inputs) (3)
Input High Voltage - I/O (3)
0
2.0
2.0
0
____
____
0
(2)
V DDQ + 150mV (2)
V
V
V
4ns maximum, and is limited to < 20mA for the period of V TERM > V DD + 150mV.
V IL
Input Low Voltage
-0.3
(1)
____
0.8
V
NOTES:
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 150mV.
5622 tbl 07
Capacitance (1)
(T A = +25°C, F = 1.0MH Z ) TQFP ONLY
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V IH (3.3V), and V DDQX for that port must be
supplied as indicated above.
Symbol
C IN
C OUT (3)
Parameter
Input Capacitance
Output Capacitance
Conditions (2)
V IN = 3dV
V OUT = 3dV
Max.
8
10.5
Unit
pF
pF
NOTES:
5622 tbl 08
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. C OUT also references C I/O .
7
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