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参数资料
| 型号： | IDT70V659S12DRI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 8/24页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 12NS 208QFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 12ns |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 208-BFQFP |
| 供应商设备封装： | 208-PQFP（28x28） |
| 包装： | 托盘 |
| 其它名称： | 70V659S12DRI |
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Recommended DC Operating
Conditions with V DDQ at 2.5V
Recommended DC Operating
Conditions with V DDQ at 3.3V
Symbol
V DD
V DDQ
V SS
Parameter
Core Supply Voltage
I/O Supply Voltage (3)
Ground
Min.
3.15
2.4
0
Typ.
3.3
2.5
0
Max.
3.45
2.6
0
Unit
V
V
V
Symbol
V DD
V DDQ
V SS
Parameter
Core Supply Voltage
I/O Supply Voltage (3)
Ground
Min.
3.15
3.15
0
Typ.
3.3
3.3
0
Max.
3.45
3.45
0
Unit
V
V
V
V IH
Input High Voltage
(3)
1.7
____
V DDQ + 100mV
(2)
V
V IH
Input High Voltage
2.0
____
V DDQ + 150mV (2)
V
(Address & Control Inputs)
(Address & Control Inputs) (3)
V IH
Input High Voltage - I/O (3)
1.7
____
V DDQ + 100mV (2)
V
V IH
Input High Voltage - I/O (3)
2.0
____
V DDQ + 150mV (2)
V
V IL
Input Low Voltage
-0.5 (1)
____
0.7
V
V IL
Input Low Voltage
-0.3
(1)
____
0.8
V
NOTES:
4869 tbl 06
NOTES:
4869 tbl 07
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V SS (0V), and V DDQX for that port must be
supplied as indicated above.
Capacitance (1)
(T A = +25°C, F = 1.0MH Z ) PQFP ONLY
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V DD (3.3V), and V DDQX for that port must be
supplied as indicated above.
Maximum Operating
Temperature and Supply Voltage (1)
Symbol
Parameter
Conditions
Max.
Unit
Grade
Ambient
Temperature
GND
V DD
0 C to +70 C
-40 C to +85 C
C IN
C OUT (2)
Input Capacitance
Output Capacitance
V IN = 0V
V OUT = 0V
8
10.5
pF
pF
4869 tbl 08
Commercial
Industrial
O O
O O
0V
0V
3.3V + 150mV
3.3V + 150mV
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. C OUT also references C I/O .
Absolute Maximum Ratings (1)
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
4869 tbl 04
Symbol
Rating
Commercial
Unit
& Industrial
V TERM (2)
(V DD )
V DD Terminal Voltage
with Respect to GND
-0.5 to + 4.6
V
NOTES:
T BIAS (3)
T STG
T JN
Temperature Under Bias
Storage Temperature
Junction Temperature
-55 to +125
-65 to +150
+150
o
o
o
C
C
C
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
I OUT (For V DDQ = 3.3V) DC Output Current
I OUT (For V DDQ = 2.5V) DC Output Current
50
40
mA
mA
2. V TERM must not exceed V DD + 150mV for more than 25% of the cycle time
or 4ns maximum, and is limited to < 20mA for the period of V TERM > V DD
+ 150mV.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
4869 tbl 05
8
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