- 您现在的位置：买卖IC网 > Datasheet目录329 > IDT70V9199L9PFI (IDT, Integrated Device Technology Inc)IC SRAM 1.125MBIT 9NS 100TQFP Datasheet资料下载
参数资料
| 型号： | IDT70V9199L9PFI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 15/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1.125MBIT 9NS 100TQFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 1.125M（128K x 9） |
| 速度： | 9ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 70V9199L9PFI |
IDT70V9199/099L
High-Speed 3.3V 128K x9/x8 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Functional Description
The IDT70V9199/099 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internal write pulse is independent of the LOW to HIGH transition of the clock
signal.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to staff the
operation of the address counters for fast interleaved memory applications.
CE 0 = V IL and CE 1 = V IH for one clock cycle will power down the internal
circuitry to reduce static power consumption. Multiple chip enables allow
easier banking of multiple IDT70V9199/099's for depth expansion con-
figurations. When the Pipelined output mode is enabled, two cycles are
required with CE 0 = V IH or CE 1 = V IL to re-activate the outputs.
A 17
Depth and Width Expansion
The IDT70V9199/099 features dual chip enables (refer to Truth Table
I) in order to facilitate rapid and simple depth expansion with no require-
ments for external logic. Figure 4 illustrates how to control the varioius chip
enables in order to expand two devices in depth.
The IDT70V9199/099 can also be used in applications requiring
expanded width, as indicated in Figure 4. Since the banks are allocated
at the discretion of the user, the external controller can be set up to drive
the input signals for the various devices as required to allow for 18/16-bit
or wider applications.
IDT70V9199/099
CE 0
IDT70V9199/099
CE 0
Control Inputs
CE 1
V DD
Control Inputs
CE 1
V DD
IDT70V9199/099
CE 1
IDT70V9199/099
CE 1
Control Inputs
CE 0
Control Inputs
CE 0
CNTRST
CLK
ADS
CNTEN
4859 drw 18
Figure 4. Depth and Width Expansion with IDT70V9199/099
15
6.42
R/ W
OE
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70V9279L7PRFI | IC SRAM 512KBIT 7NS 128TQFP |
| IDT70V9359L7BFI | IC SRAM 144KBIT 7NS 100FBGA |
| IDT70V9369L7PFI | IC SRAM 288KBIT 7NS 100TQFP |
| IDT70V9389L6PRF | IC SRAM 1.125MBIT 6NS 128TQFP |
| IDT71016S20YGI | IC SRAM 1MBIT 20NS 44SOJ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V9199L9PFI8 | 功能描述:IC SRAM 1.125MBIT 9NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V9269L12PRF | 功能描述:IC SRAM 256KBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V9269L12PRF8 | 功能描述:IC SRAM 256KBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT70V9269L12PRFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 12NS 128TQFP |
| IDT70V9269L12PRFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 12NS 128TQFP |
发布紧急采购，3分钟左右您将得到回复。