参数资料
型号: IDT71256L35PI
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: SRAM
英文描述: 32K X 8 STANDARD SRAM, 35 ns, PDIP28
封装: 0.600 INCH, PLASTIC, DIP-28
文件页数: 4/10页
文件大小: 108K
代理商: IDT71256L35PI
6.42
IDT71256S/L
CMOS Static RAM 256K (32K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
3
NO
T RECOMMENDED
FOR
NEW
DESIGNS
Recommended Operating
Temperature and Supply Voltage
Recommended DC Operating
Conditions
NOTE:
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
Grade
Temperature
GND
Vcc
Military
-55OC to +125OC0V
5V ± 10%
Industrial
-40OC to +85OC0V
5V ± 10%
Commercial
0OC to +70OC0V
5V ± 10%
2946 tbl 05
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
V
VIH
Input High Voltage
2.2
____
6.0
V
VIL
Input Low Voltage
-0.5(1)
____
0.8
V
2946 tbl 06
DC Electrical Characteristics(1,2) (VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
71256S/L20
71256S/L25
71256S/L35
71256S/L45
Symbol
Parameter
Power
Com'l.
Mil.
Com'l
& Ind
Mil.
Com'l.
& Ind
Mil.
Com'l.
Mil.
Unit
ICC
Dynamic Operating Current
CS < VIL, Outputs Open
VCC = Max., fMAX(2)
S
____
150
____
140
____
135
mA
L135
____
115
130
105
120
____
115
ISB
Standby Power Supply Current
(TTL Level),
CS > VIH, VCC = Max.,
Outputs Open, f = fMAX(2)
S
____
20
____
20
____
20
mA
L3
____
33
____
3
ISB1
Full Standby Power Supply Current
(CMOS Level),
CS > VHC,
VCC = Max., f = 0
S
____
20
____
20
____
20
mA
L0.4
____
0.4
1.5
0.4
1.5
____
1.5
2946 tbl 07
71256S/L55
71256S/L70
71256S/L85
71256S/L100
Symbol
Parameter
Power
Mil.
Unit
ICC
Dynamic Operating Current
CS < VIL, Outputs Open
VCC = Max., fMAX(2)
S
135
mA
L
115
ISB
Standby Power Supply Current
(TTL Level),
CS > VIH, VCC = Max.,
Outputs Open, f = fMAX(2)
S
20202020
mA
L
3
333
ISB1
Full Standby Power Supply Current
(CMOS Level),
CS > VHC,
VCC = Max., f = 0
S
20202020
mA
L
1.5
2946 tbl 08
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, all address inputs are cycling at fMAX; f = 0 means no address pins are cycling.
相关PDF资料
PDF描述
IDT7140SA25PFG HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
7140LA25PFG 1K X 8 DUAL-PORT SRAM, 25 ns, PQFP64
7140LA55CGI 1K X 8 DUAL-PORT SRAM, 55 ns, CDIP48
7140SA25PFGI 1K X 8 DUAL-PORT SRAM, 25 ns, PQFP64
7140LA25JGI 1K X 8 DUAL-PORT SRAM, 25 ns, PQCC52
相关代理商/技术参数
参数描述
IDT71256L35TDB 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 35NS 28CDIP
IDT71256L35Y 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
IDT71256L35Y/2996 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71256L35Y8 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
IDT71256L35YG 功能描述:IC SRAM 256KBIT 35NS 28SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6