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参数资料
| 型号： | IDT7132SA55C |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 55NS 48DIP |
| 标准包装： | 8 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 16K (2K x 8) |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-DIP（0.600"，15.24mm） |
| 供应商设备封装： | 48-SIDE BRAZED |
| 包装： | 管件 |
| 其它名称： | 7132SA55C |
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Pin Configurations (1,2,3) (con't.)
INDEX
Military, Industrial and Commercial Temperature Ranges
A 1L
8
7 6 5 4 3 2
1
52 51 50 49 48 47
46
OE R
A 2L
A 3L
9
10
45
44
A 0R
A 1R
A 4L
A 5L
A 6L
A 7L
A 8L
A 9L
I/O 0L
I/O 1L
I/O 2L
I/O 3L
11
12
13
14
15
16
17
18
19
20
IDT7132/42J
J52-1 (4)
52-Pin PLCC
Top View (5)
21 22 23 24 25 26 27 28 29 30 31 32 33
43
42
41
40
39
38
37
36
35
34
A 2R
A 3R
A 4R
A 5R
A 6R
A 7R
A 8R
A 9R
N/C
I/O 7R
2692 drw 04
NOTES:
1. All V CC pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. Package body is approximately .75 in x .75 in x .17 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
Military
Symbol
Rating
Absolute Maximum Ratings (1)
Commercial
& Industrial
Unit
Recommended Operating
Temperature and Supply Voltage (1,2)
Ambient
V TERM (2)
Terminal Voltage
-0.5 to +7.0
-0.5 to +7.0
V
Grade
Temperature
GND
Vcc
-55 C to+125 C
with Respect
to GND
Military
O O
0V
5.0V + 10%
0 C to +70 C
T BIAS
Temperature
-55 to +125
-65 to +135
o
C
Commercial
O O
0V
5.0V + 10%
-40 C to +85 C
Under Bias
Industrial
O O
0V
5.0V + 10%
T STG
Storage
-65 to +150
-65 to +150
o
C
2692 tbl 02
Temperature
NOTES:
1. This is the parameter T A . This is the "instant on" case temperature.
I OUT
DC Output
50
50
mA
2. Industrial temperature: for specific speeds, packages and powers contact your
Current
2692 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
sales office.
Recommended DC Operating
Conditions
6.0
the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
Symbol
V CC
GND
V IH
V IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5 (1)
Typ.
5.0
0
____
____
Max.
5.5
0
(2)
0.8
Unit
V
V
V
V
3
6.42
NOTES:
1. V IL (min.) = -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
2692 tbl 03
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7132SA55CB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 55NS SB48 |
| IDT7132SA55J | 功能描述:IC SRAM 16KBIT 55NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT7132SA55J8 | 功能描述:IC SRAM 16KBIT 55NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT7132SA55JI | 功能描述:IC SRAM 16KBIT 55NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 125°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) 其它名称:CAV24C32WE-GT3OSTR |
| IDT7132SA55L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 55NS 48LCC |
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