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参数资料
| 型号： | IDT7140SA35JG |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| 中文描述： | 1K X 8 DUAL-PORT SRAM, 35 ns, PQCC52 |
| 封装： | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-52 |
| 文件页数： | 14/19页 |
| 文件大小： | 149K |
| 代理商： | IDT7140SA35JG |
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
4
Absolute Maximum Ratings(1)
Recommended DC Operating
Conditions
Recommended Operating
Temperature and Supply Voltage(1)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2.
3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
Capacitance (TA = +25°C, f = 1.0MHz)
STQFP and TQFP Packages Only
NOTE:
1. At Vcc
< 2.0V leakages are undefined.
NOTES:
1.
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2.
VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
NOTES:
1.
VIL (min.) > -1.5V for pulse width less than 10ns.
2.
VTERM must not exceed Vcc + 10%.
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
Symbol
Rating
Commercial
& Industrial
Military
Unit
VTERM(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
V
TBIAS
Temperature
Under Bias
-55 to +125
-65 to +135
oC
TSTG
Storage
Temperature
-65 to +150
oC
IOUT
DC Output
Current
50
mA
2689 tbl 01
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
V
VIH
Input High Voltage
2.2
____
6.0(2)
V
VIL
Input Low Voltage
-0.5(1)
____
0.8
V
2689 tbl 02
Grade
Ambient
Temperature
GND
Vcc
Military
-55OC to +125OC0V
5.0V
+ 10%
Commercial
0OC to +70OC0V
5.0V
+ 10%
Industrial
-40OC to +85OC0V
5.0V
+ 10%
2689 tbl 03
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
9
pF
COUT
Output Capacitance
VOUT = 3dV
10
pF
2689 tbl 05
Symbol
Parameter
Test Conditions
7130SA
7140SA
7130LA
7140LA
Unit
Min.
Max.
Min.
Max.
|ILI|
Input Leakage Current
(1)
VCC = 5.5V, VIN = 0V to VCC
___
10
___
5A
|ILO|
Output Leakage Current
(1)
VCC - 5.5V,
CE = VIH, VOUT = 0V to VCC
___
10
___
5A
VOL
Output Low Voltage (I/O0-I/O7)IOL = 4mA
___
0.4
___
0.4
V
VOL
Open Drain Output
Low Voltage (
BUSY, INT)
IOL = 16mA
___
0.5
___
0.5
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
2689 tbl 04
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| IDT7140SA35L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 35NS 48LCC |
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| IDT7140SA35PF | 功能描述:IC SRAM 8KBIT 35NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
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