参数资料
型号: IDT71T75602S133PFI8
厂商: IDT, Integrated Device Technology Inc
文件页数: 12/23页
文件大小: 0K
描述: IC SRAM 18MBIT 133MHZ 100TQFP
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 同步 ZBT
存储容量: 18M(512K x 36)
速度: 133MHz
接口: 并联
电源电压: 2.375 V ~ 2.625 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 带卷 (TR)
其它名称: 71T75602S133PFI8
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT? SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Read Operation with Chip Enable Used (1)
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
n+9
Address
X
X
A 0
X
A 1
X
X
A 2
X
X
R/ W
X
X
H
X
H
X
X
H
X
X
ADV/ LD
L
L
L
L
L
L
L
L
L
L
CE (2)
H
H
L
H
L
H
H
L
H
H
CEN
L
L
L
L
L
L
L
L
L
L
BW x
X
X
X
X
X
X
X
X
X
X
OE
X
X
X
X
L
X
L
X
X
L
I/O (3)
?
?
Z
Z
Q 0
Z
Q 1
Z
Z
Q 2
Comments
Deselected.
Deselected.
Address and Control meet setup.
Deselected or STOP.
Address A 0 Read out. Load A 1 .
Deselected or STOP.
Address A 1 Read out. Deselected.
Address and control meet setup.
Deselected or STOP.
Address A 2 Read out. Deselected.
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE 2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
3. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
Write Operation with Chip Enable Used (1)
5313 tbl 19
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
n+9
Address
X
X
A 0
X
A 1
X
X
A 2
X
X
R/ W
X
X
L
X
L
X
X
L
X
X
ADV /LD
L
L
L
L
L
L
L
L
L
L
CE (2)
H
H
L
H
L
H
H
L
H
H
CEN
L
L
L
L
L
L
L
L
L
L
BW x
X
X
L
X
L
X
X
L
X
X
OE
X
X
X
X
X
X
X
X
X
X
I/O
?
?
Z
Z
D 0
Z
D 1
Z
Z
D 2
Comments
Deselected.
Deselected.
Address and Control meet setup.
Deselected or STOP.
Address D 0 Write in. Load A 1 .
Deselected or STOP.
Address D 1 Write in. Deselected.
Address and control meet setup.
Deselected or STOP.
Address D 2 Write in. Deselected.
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE 2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
12
6.42
5313 tbl 20
相关PDF资料
PDF描述
PM105SB-270M-RC INDUCTOR POWER 27UH SHIELD SMD
ESM43DTBH-S189 CONN EDGECARD 86POS R/A .156 SLD
356-030-526-101 CARDEDGE 30POS .156 BLACK
IDT71T75602S133PFI IC SRAM 18MBIT 133MHZ 100TQFP
RGZ-0515D CONV DC/DC 2W 05VIN +/-15VOUT
相关代理商/技术参数
参数描述
IDT71T75602S150BG 功能描述:IC SRAM 18MBIT 150MHZ 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT71T75602S150BG8 功能描述:IC SRAM 18MBIT 150MHZ 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT71T75602S150BGG 功能描述:IC SRAM 18MBIT 150MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT71T75602S150BGG8 功能描述:IC SRAM 18MBIT 150MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT71T75602S150BGGI 功能描述:IC SRAM 18MBIT 150MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8