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参数资料
| 型号： | INA-32063-TR1 |
| 英文描述： | 3.0 GHz Wideband Silicon RFIC Amplifier |
| 中文描述： | 3.0千兆赫宽带硅射频放大器 |
| 文件页数： | 5/11页 |
| 文件大小： | 88K |
| 代理商： | INA-32063-TR1 |
5
INA-32063 Applications
Information
Introduction
The INA-32063 is a +3 volt silicon
RFIC amplifier that is designed
with a two stage internal network
to provide a broadband gain and
50
input and output impedance.
With a typical +4.8 dBm P
-1dB
compressed output power at
1900 MHz, for only 20 mA supply
current. The broad bandwidth,
INA-32063, is well suited for
amplifier applications in mobile
communication systems.
A feature of the INA-32063 is a
positive gain slope over the
1–2.5 GHz range that is useful in
many satellite-based TV and
datacom systems.
In addition to use in buffer and
driver amplifier applications in
the cellular market, the
INA-32063 will find many
applications in battery operated
wireless communication systems.
Operating Details
The INA-32063 is a voltage-biased
device that operates from a
+3 volt power supply with a
typical current drain of 20 mA. All
bias regulation circuitry is
integrated into the RFIC.
Figure 10 shows a typical imple-
mentation of the INA-32063. The
supply voltage for the INA-32063
must be applied to two terminals,
the V
d
pin and the RF Output pin.
RF
Output
RF
Input
V
d
C
bypass
C
out
C
block
3
RFC
Gnd2
Gnd1
Gnd1
Figure 10. Basic Amplifier
Application.
The V
d
connection to the ampli-
fier is RF bypassed by placing a
capacitor to ground near the V
d
pin of the amplifier package.
The power supply connection to
the RF Output pin is achieved by
means of a RF choke (inductor).
The value of the RF choke must
be large relative to 50
in order
to prevent loading of the RF
Output. The supply voltage end of
the RF choke is bypassed to
ground with a capacitor. If the
physical layout permits, this can
be the same bypass capacitor that
is used at the V
d
terminal of the
amplifier.
Blocking capacitors are normally
placed in series with the RF Input
and the RF Output to isolate the
DC voltages on these pins from
circuits adjacent to the amplifier.
The values for the blocking and
bypass capacitors are selected to
provide a reactance at the lowest
frequency of operation that is
small relative to 50
.
Example Layout for 50
Output Amplifier
An example layout for an ampli-
fier using the INA-32063 with
50
input and 50
output is
shown in Figure 11.
RF Output
and Vd
Gnd 1
RF Input
Gnd 1
Gnd 2
50
50
Figure 11. RF Layout.
This example uses a
microstripline design (solid
groundplane on the backside of
the circuit board). The circuit
board material is 0.031-inch thick
FR-4. Plated through holes (vias)
are used to bring the ground to
the topside of the circuit where
needed. The performance of
INA-32063 is sensitive to ground
path inductance. The two-stage
design creates the possibility of a
feedback loop being formed
through the ground returns of the
stages, Gnd 1 and Gnd 2.
Gnd 1
Gnd 2
VIA
Figure 12. INA-32063 Potential
Ground Loop.
Gnd 1
Gnd 2
VIA
VIA
Figure 13. INA-32063 Suggested
Layout.
At least one ground via should be
placed adjacent to each ground
pin to assure good RF grounding.
Multiple vias are used to reduce
the inductance of the path to
ground and should be placed as
close to the package terminals as
practical.
The effects of the potential
ground loop shown in Figure 12
may be observed as a “peaking” in
the gain versus frequency
response, an increase in input
VSWR, or even as return gain at
the input of the INA-32063.
Figure 14 shows an assembled
amplifier. The +3 volt supply is
fed directly into the V
d
pin of the
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相关代理商/技术参数 |
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|---|---|
| INA-32063-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:3.0 GHz Wideband Silicon RFIC Amplifier |
| INA321 | 制造商:TI 制造商全称:Texas Instruments 功能描述:microPower, Single-Supply, CMOS Instrumentation Amplifier |
| INA321E | 制造商:Texas Instruments 功能描述:AMP INSTRUMENTATION VSSOP8 321 |
| INA321E/250 | 功能描述:仪表放大器 Micropwr Single-sply CMOS RoHS:否 制造商:Texas Instruments 通道数量: 输入补偿电压:150 V 可用增益调整: 最大输入电阻:10 kOhms 共模抑制比（最小值）:88 dB 工作电源电压:2.7 V to 36 V 电源电流:200 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:MSOP-8 封装:Bulk |
| INA321E/250G4 | 功能描述:仪表放大器 Micropwr Single-sply CMOS RoHS:否 制造商:Texas Instruments 通道数量: 输入补偿电压:150 V 可用增益调整: 最大输入电阻:10 kOhms 共模抑制比（最小值）:88 dB 工作电源电压:2.7 V to 36 V 电源电流:200 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:MSOP-8 封装:Bulk |
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