参数资料
型号: INA-32063-TR1
英文描述: 3.0 GHz Wideband Silicon RFIC Amplifier
中文描述: 3.0千兆赫宽带硅射频放大器
文件页数: 8/11页
文件大小: 88K
代理商: INA-32063-TR1
8
TIME (seconds)
T
MAX
T
°
C
0
0
50
100
150
200
250
60
Preheat
Zone
Cool Down
Zone
Reflow
Zone
120
180
240
300
Figure 18. Surface Mount Assembly Profile.
please refer to Agilent application
note AN-A006.
These parameters are typical for
a surface mount assembly
process for the INA-32063. As a
general guideline, the circuit
board and components should
only be exposed to the minimum
temperatures and times neces-
sary to achieve a uniform reflow
of solder.
Electrostatic Sensitivity
RFICs are electrostatic
discharge (ESD)
sensitive devices.
Although the
INA-32063 is robust in design,
permanent damage may occur to
these devices if they are sub-
jected to high-energy electrostatic
discharges. Electrostatic charges
as high as several thousand volts
(which readily accumulate on the
human body and on test equip-
ment) can discharge without
detection and may result in
degradation in performance or
failure. Electronic devices may be
subjected to ESD damage in any
of the following areas:
Storage & handling
Inspection & testing
Assembly
In-circuit use
The INA-32063 is an ESD Class 1
device. Therefore, proper ESD
precautions are recommended
when handling, inspecting, and
assembling these devices to avoid
damage.
For more information on
Electrostatic Discharge and
Control refer to Agilent
application note AN-A004R.
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