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参数资料
型号： INA-32063-TR1
英文描述： 3.0 GHz Wideband Silicon RFIC Amplifier
中文描述： 3.0千兆赫宽带硅射频放大器
文件页数： 7/11页
文件大小： 88K
代理商： INA-32063-TR1
7
0.026
0.075
0.016
0.035
Figure 16. PCB Pad Layout for
INA-32063 ( dimensions in inches) .
Statistical Parameters
Several categories of parameters
appear within this data sheet.
Parameters may be described
with values that are either
“minimum or maximum,”
“typical,” or “standard
deviations.” The values for
parameters are based on compre-
hensive product characterization
data, in which automated mea-
surements are made on a large
number of parts taken from
3 non-consecutive process lots of
semiconductor wafers. The data
derived from product character-
ization tends to be normally
distributed, e.g., fits the standard
“bell curve.”
Parameters considered to be the
most important to system perfor-
mance are bounded by minimum
or maximum values. For the
INA-32063, these parameters are:
Power Gain (|S21|
2
) and the
Device Current (I
d
). Each of
these guaranteed parameters is
100% tested. Values for most of
the parameters in the table of
Electrical Specifications that are
described by typical data are the
mathematical mean (
μ
), of the
normal distribution taken from
the characterization data. For
parameters where measurements
or mathematical averaging may
not be practical, such as
S-parameters or Noise Param-
eters and the performance
curves, the data represents a
nominal part taken from the
“center” of the characterization
distribution. Typical values are
intended to be used as a basis for
electrical design.
To assist designers in optimizing
not only the immediate circuit
using the INA-32063, but to also
optimize and evaluate trade-off
that affect a complete wireless
system, the standard deviation
(
σ
) is provided for many of the
Electrical Specifications param-
eters (at 25
°
C) in addition to the
mean. The standard deviation is a
measure of the variability about
the mean. It will be recalled that a
normal distribution is completely
described by the mean and
standard deviation.
Standard statistics tables or
calculations provide the probabil-
ity of a parameter falling between
any two values, usually symmetri-
cally located about the mean.
Referring to Figure 17 for ex-
ample, the probability of a
parameter being between
±
1
σ
is
68.3%; between
±
2
σ
is 95.4%; and
between
±
3
σ
is 99.7%.
68%
95%
99%
Parameter Value
Mean
(
μ
), typ
-3
σ
-2
σ
-1
σ
+1
σ
+2
σ
+3
σ
Figure 17. Normal Distribution.
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT-363
package, will reach solder reflow
temperatures faster than those
with a greater mass.
The INA-32063 has been qualified
to the time-temperature profile
shown in Figure 18. This profile is
representative of an IR reflow
type of surface mount assembly
process.
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evapo-
rating solvents from the solder
paste. The reflow zone briefly
elevates the temperature suffi-
ciently to produce a reflow of the
solder. The rates of change of
temperature for the ramp-up and
cool down zones are chosen to be
low enough to not cause deforma-
tion of the board or damage to
components due to thermal
shock.
For more information on mount-
ing considerations for packaged
microwave semiconductors
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相关代理商/技术参数
参数描述
INA-32063-TR2 制造商:AGILENT 制造商全称:AGILENT 功能描述:3.0 GHz Wideband Silicon RFIC Amplifier
INA321 制造商:TI 制造商全称:Texas Instruments 功能描述:microPower, Single-Supply, CMOS Instrumentation Amplifier
INA321E 制造商:Texas Instruments 功能描述:AMP INSTRUMENTATION VSSOP8 321
INA321E/250 功能描述:仪表放大器 Micropwr Single-sply CMOS RoHS:否 制造商:Texas Instruments 通道数量: 输入补偿电压:150 V 可用增益调整: 最大输入电阻:10 kOhms 共模抑制比（最小值）:88 dB 工作电源电压:2.7 V to 36 V 电源电流:200 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:MSOP-8 封装:Bulk
INA321E/250G4 功能描述:仪表放大器 Micropwr Single-sply CMOS RoHS:否 制造商:Texas Instruments 通道数量: 输入补偿电压:150 V 可用增益调整: 最大输入电阻:10 kOhms 共模抑制比（最小值）:88 dB 工作电源电压:2.7 V to 36 V 电源电流:200 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:MSOP-8 封装:Bulk
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