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参数资料
| 型号： | IP82C88 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 外设及接口 |
| 英文描述： | CMOS Bus Controller |
| 中文描述： | 8 MHz, CONTROL AND CMD SIG GEN, PDIP20 |
| 文件页数： | 5/10页 |
| 文件大小： | 129K |
| 代理商： | IP82C88 |
4-337
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+8.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.5V to V
CC
+0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance (Typical)
CERDIP Package . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
PDIP Package . . . . . . . . . . . . . . . . . . .
PLCC Package . . . . . . . . . . . . . . . . . .
Storage Temperature Range. . . . . . . . . . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
(PLCC - Lead Tips Only)
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
C82C88. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
o
C to +70
o
C
I82C88 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
M82C88 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
θ
JA
(
o
C/W)
75
85
75
75
θ
JC
(
o
C/W)
18
22
N/A
N/A
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V
CC
= 5.0V
±
10%;
T
A
= 0
o
C to +70
o
C (C82C88);
T
A
= -40
o
C to +85
o
C (I82C88);
T
A
= -55
o
C to +125
o
C (M82C88)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
V
IH
Logical One Input Voltage
2.0
2.2
-
-
V
V
C82C88, I82C88
M82C88
V
IL
Logical Zero Input Voltage
-
0.8
V
VIHC
CLK Logical One Input Voltage
V
CC
-0.8
-
V
VILC
CLK Logical Zero Input Voltage
-
0.8
V
V
OH
Output High Voltage
Command Outputs
3.0
V
CC
-0.4
-
V
V
I
OH
= -8.0mA
I
OH
= -2.5mA
Output High Voltage
Control Outputs
3.0
V
CC
-0.4
-
V
V
I
OH
= -4.0mA
I
OH
= -2.5mA
V
OL
Output Low Voltage
Command Outputs
-
0.5
V
I
OL
= +12.0mA
Output Low Voltage
Control Outputs
-
0.4
V
I
OL
= +8.0mA
I
I
Input Leakage Current
-1.0
1.0
μ
A
V
IN
= GND or V
CC
, except S0, S1, S2,
DIP Pins 1-2, 6, 15
IBHH
Input Leakage Current-Status Bus
-50
-300
μ
A
V
IN
= 2.0V, S0, S1, S2 (See Note 1)
IO
Output Leakage Current
-10.0
10.0
μ
A
V
O
= GND or V
CC
, IOB = GND, AEN = V
CC
,
DIP Pins 7-9, 11-14
ICCSB
Standby Power Supply
-
10
μ
A
V
CC
= 5.5V, V
IN
= V
CC
or GND, Outputs Open
ICCOP
Operating Power Supply Current
-
1
mA/MHz
V
CC
= 5.5V, Outputs Open (See Note 2)
NOTES:
1. IBHH should be measured after raising the V
IN
on S0, S1, S2 to V
CC
and then lowering to valid input high level of 2.0V.
2. ICCOP = 1mA/MHz of CLK cycle time (TCLCL)
Capacitance
T
A
= +25
o
C
SYMBOL
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
CIN
Input Capacitance
10
pF
FREQ = 1MHz, all measurements are
referenced to device GND
COUT
Output Capacitance
17
pF
82C88
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