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参数资料
| 型号： | IPB35CN10NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 2/13页 |
| 文件大小： | 707K |
| 代理商： | IPB35CN10NG |
IPB35CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G IPU33CN10N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.6
K/W
R
thJA
minimal footprint
-
-
62
6 cm2 cooling area
4)
-
-
40
minimal footprint
-
-
75
6 cm2 cooling area
4)
-
-
50
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
100
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=29 μA
2
3
4
Zero gate voltage drain current
I
DSS
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=80 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
1
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=27 A,
(TO252)
-
25
33
m
V
GS
=10 V,
I
D
=27 A,
(TO251)
-
25
33
V
GS
=10 V,
I
D
=27 A,
(TO263)
-
25
35
V
GS
=10 V,
I
D
=27 A,
(TO220, TO262)
-
26
35
Gate resistance
R
G
-
1
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=27 A
15
30
-
S
Values
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
Thermal resistance, junction -
ambient (TO251, TO252)
Rev.1.02
page 2
2006-06-02
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