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参数资料
| 型号： | IPB80N04S2-H4 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶体管 |
| 文件页数： | 3/8页 |
| 文件大小： | 169K |
| 代理商： | IPB80N04S2-H4 |
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C
iss
-
4400
-
pF
Output capacitance
C
oss
-
1800
-
Reverse transfer capacitance
C
rss
-
480
-
Turn-on delay time
t
d(on)
-
23
-
ns
Rise time
t
r
-
63
-
Turn-off delay time
t
d(off)
-
46
-
Fall time
t
f
-
22
-
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
-
21
29
nC
Gate to drain charge
Q
gd
-
38
70
Gate charge total
Q
g
-
103
148
Gate plateau voltage
V
plateau
-
4.9
-
V
Reverse Diode
Diode continous forward current
2)
I
S
-
-
80
A
Diode pulse current
2)
I
S,pulse
-
-
320
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
-
0.9
1.3
V
Reverse recovery time
2)
t
rr
V
R
=20 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
-
195
240
ns
Reverse recovery charge
2)
Q
rr
V
R
=20 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
-
370
460
nC
1)
Current is limited by bondwire; with an
R
thJC
= 0.5K/W the chip is able to carry 200A at 25°C. For detailed
information see Application Note ANPS071E at
www.infineon.com/optimos
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
V
DD
=20 V,
V
GS
=10 V,
I
D
=80 A,
R
G
=1.3
V
DD
=32 V,
I
D
=80 A,
V
GS
=0 to 10 V
2)
Defined by design. Not subject to production test.
3)
See diagram 13.
4)
Qualified at -20V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-02
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB80N04S2-H4_08 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor |
| IPB80N04S2H4ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 40V 80A TO263-3 |
| IPB80N04S2L03 | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N04S2L-03 | 功能描述:MOSFET OptiMOS PWR TRANST 40V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N04S2L03ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 40V 80A TO263-3 |
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