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参数资料
| 型号： | IPB80P03P3L-04 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS-P Power-Transistor |
| 中文描述： | 的OptiMOS磷功率晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 230K |
| 代理商： | IPB80P03P3L-04 |
2004-03-04
Page 1
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
Target data sheet
Opti
MOS
-P Power-Transistor
Product Summary
V
DS
R
DS(on)
max. SMD version
I
D
-30
V
m
A
4
-80
Feature
P-Channel
Enhancement mode
Logic Level
Automotive AEC Q101 qualified
Green package (lead free)
MSL1 up to 260°C
peak reflow temperature
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO263 -3-2
P- TO262 -3-1
P- TO220 -3-1
Gate
pin1
Drain
pin 2
Source
pin 3
Marking
3P03L04
3P03L04
3P03L04
Type
IPP80P03P3L-04
Package
P- TO220 -3-1
Ordering Code
-
IPB80P03P3L-04
P- TO263 -3-2
-
IPI80P03P3L-04
P- TO262 -3-1
-
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
Value
Unit
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
I
D
-80
-80
T
C
=25°C
Avalanche energy, single pulse
I
D puls
-320
I
D
=-80 A ,
V
DD
=-25V,
R
GS
=25
Reverse diode d
v
/d
t
E
AS
432
mJ
I
S
=-80A,
V
DS
=-24V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
d
v
/d
t
-6
kV/μs
V
GS
P
tot
±20
200
V
T
C
=25°C
Operating and storage temperature
W
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
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| IPB80P03P405ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 80A TO263-3 |
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| IPB80P03P4L04ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 80A TO263-3 |
| IPB80P03P4L-07 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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