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参数资料
| 型号： | IPB80P03P3L-04 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS-P Power-Transistor |
| 中文描述： | 的OptiMOS磷功率晶体管 |
| 文件页数： | 3/4页 |
| 文件大小： | 230K |
| 代理商： | IPB80P03P3L-04 |
2004-03-04
Page 3
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
Target data sheet
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
≥
2
I
D
R
DS(on)max
,
I
D
=-80A
63
125
-
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0,
V
DS
=-25V,
f
=1MHz
-
-
7720
2050
-
-
pF
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
1673
-
V
DD
=-15V,
V
GS
=-10V,
I
D
=-1A,
R
G
=6
-
30
45
ns
-
45
68
-
200
300
-
180
270
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
Q
g
V
DD
=-24V,
I
D
=-80A
-
-25
-38
nC
-
-85
-128
Gate charge total
V
DD
=-24V,
I
D
=-80A,
V
GS
=0 to -10V
-
-200
-300
Gate plateau voltage
V
(plateau)
V
DD
=-24V,
I
D
=-80A
-
-3
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C
-
-
-80
A
Inv. diode direct current, pulsed
I
SM
V
SD
t
rr
Q
rr
-
-
-320
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
GS
=0, |
IF
| = |
ID
|
-
-1.1
-1.3
V
V
R
=-15V,
|
I
F
|
=
|
l
D
|
,
d
i
F
/d
t
=100A/μs
-
60
75
ns
-
75
95
nC
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相关代理商/技术参数 |
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|---|---|
| IPB80P03P4-05 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80P03P405ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 80A TO263-3 |
| IPB80P03P4L-04 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80P03P4L04ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 80A TO263-3 |
| IPB80P03P4L-07 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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