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参数资料
| 型号： | IPB80P03P3L-04 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS-P Power-Transistor |
| 中文描述： | 的OptiMOS磷功率晶体管 |
| 文件页数： | 4/4页 |
| 文件大小： | 230K |
| 代理商： | IPB80P03P3L-04 |
2004-03-04
Page 4
IPI80P03P3L-04
IPP80P03P3L-04,IPB80P03P3L-04
Target data sheet
Published by
Infineon Technologies AG
,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BIPP80P03P3L-04, BIPB80P03P3L-04 and BIPI80P03P3L-04, for
simplicity the device is referred to by the term IPP80P03P3L-04, IPB80P03P3L-04 and IPI80P03P3L-04
throughout this documentation
相关PDF资料 |
PDF描述 |
|---|---|
| IPD03N03LB | OptiMOS 2 Power-Transistor |
| IPD03N03LBG | OptiMOS 2 Power-Transistor |
| IPD03N03LA | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
| IPD04N03L | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle |
| IPD05N03LBG | OptiMOS㈢2 Power-Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB80P03P4-05 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80P03P405ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 80A TO263-3 |
| IPB80P03P4L-04 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80P03P4L04ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 80A TO263-3 |
| IPB80P03P4L-07 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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