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参数资料
| 型号： | IPD04N03L |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle |
| 中文描述： | 的OptiMOS降压转换器系列 |
| 文件页数： | 3/8页 |
| 文件大小： | 388K |
| 代理商： | IPD04N03L |
2003-01-17
Page 3
IPD04N03L
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=100A
59
118
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
2500
980
230
11
17
44
20.2
3320 pF
1300
350
16.5
26
66
30.3
V
DD
=15V,
V
GS
=10V,
I
D
=25A,
R
G
=2.7
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DD
=15V,
I
D
=50A
-
-
-
8.9
22.1
39
11.8
33.2
47
nC
V
DD
=15V,
I
D
=50A,
V
GS
=0 to 5V
Output charge
Q
oss
V
DS
=15V,
I
D
=50A,
V
GS
=0V
-
35
44
nC
Gate plateau voltage
V
(plateau)
V
DD
=15V,
I
D
=50A
-
3.3
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
100
A
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
SM
V
SD
t
rr
Q
rr
-
-
-
-
-
400
1.3
58
69
V
GS
=0V,
I
F
=80A
0.9
46
56
V
ns
nC
V
R
=15V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
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相关代理商/技术参数 |
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|---|---|
| IPD04N03LA | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD04N03LA G | 功能描述:MOSFET N-CH 25V 50A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD04N03LAG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPD04N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(2+Tab) TO-252 |
| IPD04N03LB G | 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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