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参数资料
| 型号： | IPD04N03L |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle |
| 中文描述： | 的OptiMOS降压转换器系列 |
| 文件页数： | 4/8页 |
| 文件大小： | 388K |
| 代理商： | IPD04N03L |
2003-01-17
Page 4
IPD04N03L
1 Power dissipation
P
tot
=
f
(
T
C
)
0
20
40
60
80
100 120 140 160
°C
190
T
C
0
20
40
60
80
100
120
W
160
IPD04N03L
P
t
2 Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥
10 V
IPD04N03L
0
20
40
60
80
100 120 140 160
°C
190
T
C
0
10
20
30
40
50
60
70
80
90
A
110
I
D
4 Max. transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
1
10
K/W
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
IPD04N03L
Z
t
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 °C
3
10
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
A
IPD04N03L
I
D
R
D(n
V
D
I
D
DC
10 ms
1 ms
100 μs
10 μs
t
p = 8.5μs
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相关代理商/技术参数 |
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|---|---|
| IPD04N03LA | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD04N03LA G | 功能描述:MOSFET N-CH 25V 50A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD04N03LAG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPD04N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(2+Tab) TO-252 |
| IPD04N03LB G | 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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