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参数资料
| 型号： | IPD04N03L |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle |
| 中文描述： | 的OptiMOS降压转换器系列 |
| 文件页数： | 7/8页 |
| 文件大小： | 388K |
| 代理商： | IPD04N03L |
2003-01-17
Page 7
IPD04N03L
13 Typ. avalanche energy
E
AS
=
f
(
T
j
)
par.:
I
D
= 55 A,
V
DD
= 25 V,
R
GS
= 25
25
45
65
85
105
125
145
°C
185
Tj
0
5
10
15
20
25
30
35
40
45
50
mJ
60
E
14 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= 50 A pulsed
IPD04N03L
0
10
20
30
40
50
60
70
80
nC
100
Q
Gate
0
2
4
6
8
10
12
V
16
V
G
0.2
V
DS max
0.5
V
DS max
0.8
V
DS max
15 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
parameter:
I
D
=10 mA
IPD04N03L
-60
-20
20
60
100
140
°C
T
j
200
27
28
29
30
31
32
33
34
V
36
V
(
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相关代理商/技术参数 |
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|---|---|
| IPD04N03LA | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD04N03LA G | 功能描述:MOSFET N-CH 25V 50A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD04N03LAG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPD04N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(2+Tab) TO-252 |
| IPD04N03LB G | 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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