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参数资料
| 型号： | IPD04N03L |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle |
| 中文描述： | 的OptiMOS降压转换器系列 |
| 文件页数： | 6/8页 |
| 文件大小： | 388K |
| 代理商： | IPD04N03L |
2003-01-17
Page 6
IPD04N03L
9 Drain-source on-state resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 50 A,
V
GS
= 10 V
IPD04N03L
-60
-20
20
60
100
140
°C
T
j
200
0
1
2
3
4
5
6
7
8
9
m
11
R
D
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
=
f
(
T
j)
parameter:
V
GS
=
V
DS
-60
-20
20
60
100
°C
180
Tj
0.35
0.55
0.75
0.95
1.15
1.35
1.55
1.75
1.95
V
2.35
V
ID=110μA
ID=6.4mA
11 Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
=0V,
f
=1 MHz
4
10
0
5
10
15
20
V
30
V
DS
2
10
3
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 80 μs
3
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
0
10
1
10
2
10
A
IPD04N03L
I
F
T
j
= 25 °C typ
T
j
= 175 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C (98%)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPD04N03LA | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD04N03LA G | 功能描述:MOSFET N-CH 25V 50A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD04N03LAG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPD04N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(2+Tab) TO-252 |
| IPD04N03LB G | 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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