参数资料
型号: IPD60R385CP
厂商: INFINEON TECHNOLOGIES AG
英文描述: CoolMOS Power Transistor
中文描述: 的CoolMOS功率晶体管
文件页数: 3/10页
文件大小: 360K
代理商: IPD60R385CP
IPD60R385CP
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
790
-
pF
Output capacitance
C
oss
-
38
-
Effective output capacitance, energy
related
6)
Effective output capacitance, time
related
7)
C
o(er)
-
36
-
C
o(tr)
-
300
-
Turn-on delay time
t
d(on)
-
10
-
ns
Rise time
t
r
-
5
-
Turn-off delay time
t
d(off)
-
40
-
Fall time
t
f
-
5
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
4
-
nC
Gate charge at threshold
Q
g(th)
-
4.6
6.2
Gate to drain charge
Q
gd
-
6
-
Switching charge
Q
sw
-
12
17
Gate charge total
Q
g
-
17
22
Gate plateau voltage
V
plateau
-
5.0
-
V
Reverse Diode
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=5.2 A,
T
j
=25 °C
-
0.9
1.2
V
Reverse recovery time
t
rr
-
260
-
ns
Reverse recovery charge
Q
rr
-
3.1
-
μC
Peak reverse recovery current
I
rrm
-
24
-
A
6)
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
7)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
Values
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
V
DD
=400 V,
V
GS
=10 V,
I
D
=9.9 A,
R
G
=6.8
V
DD
=400 V,
I
D
=5.2 A,
V
GS
=0 to 10 V
V
GS
=0 V,
V
DS
=0 V
to 480 V
4)
I
SD
=I
D
, di/dt<=400A/μs, V
DClink
=400V, V
peak
<V
(BR)DSS
, T
j
<T
jmax
, identical low side and high side switch
V
R
=400 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
5)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain connection.
PCB is without blown air.
2)
Pulse width
t
p
limited by
T
j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
1)
J-STD20 and JESD22
Rev. 2.0
page 3
2006-04-04
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