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参数资料
| 型号： | IPS021 |
| 厂商： | International Rectifier |
| 英文描述： | FULLY PROTECTED POWER MOSFET SWITCH |
| 中文描述： | 充分保护功率MOSFET开关 |
| 文件页数： | 3/11页 |
| 文件大小： | 142K |
| 代理商： | IPS021 |
IPS021(S)
www.irf.com
3
Symbol Parameter
Tsd
Over temperature threshold
Isd
Over current threshold
V
reset
IN protection reset threshold
Treset
Time to reset protection
EOI_OT
Short circuit energy (see application note)
Min.
—
4
1.5
2
—
Typ.
165
5.5
2.3
10
400
Max. Units Test Condition
s
—
See fig. 1
7
A
See fig. 1
3
V
40
μ
s Vin = 0V, Tj = 25
o
C
—
μ
J
Vcc = 14V
o
C
Protection Characteristics
Symbol Parameter
Rds(on)
ON state resistance Tj = 25
o
C
Tj = 150
o
C
Idss 1
Drain to source leakage current
Idss 2
Drain to source leakage current
V
clamp 1
Drain to source clamp voltage 1
V
clamp 2
Drain to source clamp voltage 2
Vin
clamp
IN to source clamp voltage
Vth
IN threshold voltage
Iin, -on
ON state IN positive current
Iin, -off
ON state IN positive current
Min.
100
—
0
0
48
50
7
1
25
50
Typ.
130
220
0.01
0.1
54
56
8
1.5
90
130
Max. Units Test Conditions
150
280
25
Vcc = 14V, Tj = 25
o
C
50
Vcc = 40V, Tj = 25
o
C
56
Id = 20mA
(see Fig.3 & 4)
60
9.5
Iin = 1 mA
2
Id = 50mA, Vds = 14V
200
Vin = 5V
250
Vin = 5V
over-current triggered
Static Electrical Characteristics
Standard footprint 70
μ
m copper thickness. Tj = 25
o
C (unless otherwise specified.)
m
Vin = 5V, Ids = 1A
Id=Ishutdown
(see Fig.3 & 4)
μ
A
V
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 10
, Rinput = 50
,
100
μ
s
pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Ton
Turn-on delay time
Tr
Rise time
Trf
Time to (final Rds(on) 1.3)
Toff
Turn-off delay time
Tf
Fall time
Qin
Total gate charge
Min.
0.15
0.4
2
0.8
0.5
—
Typ.
0.5
0.9
6
2
1.3
3.3
Max. Units Test Conditions
1
2
12
3.5
2.5
—
nC
Vin = 5V
See figure 2
See figure 2
μ
s
μ
A
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