参数资料
型号: IPS021S
厂商: International Rectifier
英文描述: FULLY PROTECTED POWER MOSFET SWITCH
中文描述: 充分保护功率MOSFET开关
文件页数: 1/11页
文件大小: 142K
代理商: IPS021S
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS021
(
S
)
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60148-K
Description
The IPS021/IPS021S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165
o
C
or when the drain current reaches 5A. These devices
restart once the input is cycled. The avalanche capa-
bility is significantly enhanced by the active clamp
and covers most inductive load demagnetizations.
Packages
Product Summary
R
ds(on)
150m
(max)
V
clamp
50V
I
shutdown
5A
T
on
/T
off
1.5
μ
s
3-Lead D
2
Pak
IPS021S
3-Lead TO-220
IPS021
www.irf.com
1
Typical Connection
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
相关PDF资料
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IPS031S FULLY PROTECTED POWER MOSFET SWITCH
IPS031 FULLY PROTECTED POWER MOSFET SWITCH
相关代理商/技术参数
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