参数资料
型号: IPS032G
厂商: International Rectifier
文件页数: 3/11页
文件大小: 0K
描述: IC MOSFET PWR SW DUAL 12A 16SOIC
标准包装: 45
类型: 低端
输入类型: 非反相
输出数: 2
导通状态电阻: 45 毫欧
电流 - 输出 / 通道: 1.65A
电流 - 峰值输出: 15A
电源电压: 4 V ~ 6 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 管件
其它名称: *IPS032G
IPS031G/IPS032G
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max)
Continuous Drain to Source voltage
35
VIH
VIL
High level input voltage
Low level input voltage
4
0
6
0.5
V
Ids
Continuous drain current
Tamb=85 o C
(TAmbient = 85 o C, IN = 5V, rth = 100 o C/W, Tj = 125 o C) IPS031G
(TAmbient = 85 o C, IN = 5V, rth = 85 o C/W, Tj = 125 o C) IPS032G
2.2
1.65
A
Rin Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
0.2
5
1
k ?
μ S
Fr-I sc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
Static Electrical Characteristics
(Tj = 25 o C unless otherwise specified.)
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
Rds(on)
Idss
@Tj=25 o C
Idss2
ON state resistance Tj = 25 o C
ON state resistance Tj = 150 o C
Drain to source leakage current
Drain to source leakage current
20
0
0
45
75
0.5
5
60
100
25
50
m ?
μ A
Vin = 5V, Ids = 1A
Vcc = 14V, Tj = 25 o C
Vcc = 40V, Tj = 25 o C
@Tj=25 o C
V clamp 1
Drain to source clamp voltage 1
47
52
56
Id = 20mA (see Fig.3 & 4)
V clamp 2
Vin clamp
Vth
Iin, -on
Iin, -off
Drain to source clamp voltage 2
IN to source clamp voltage
IN threshold voltage
ON state IN positive current
OFF state IN positive current
50
7
1
25
50
53
8.1
1.6
90
130
60
9.5
2
200
250
V
μ A
Id=Ishutdown (see Fig.3 & 4)
Iin = 1 mA
Id = 50mA, Vds = 14V
Vin = 5V
Vin = 5V
over-current triggered
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5 ? (IPS031), Resistive Load = 3 ? (IPS031S), Rinput = 50 ?, 100 μ s pulse,T j = 25 o C, (unless
otherwise specified).
  Symbol Parameter
Min.
Typ. Max. Units Test Conditions
Ton
Tr
Trf
T off
Tf
Qin
Turn-on delay time
Rise time
Time to 130% final Rds(on)
Turn-off delay time
Fall time
Total gate charge
0.05
0.4
0.8
0.5
0.3
1
8
2
1.5
1.1
0.6
2
3.5
2.5
μ s
nC
See figure 2
See figure 2
Vin = 5V
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