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参数资料
| 型号： | IPS042GTR |
| 厂商： | International Rectifier |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET PWR SW DUAL 2A 8-SOIC |
| 标准包装： | 2,500 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 2 |
| 导通状态电阻： | 370 毫欧 |
| 电流 - 输出 / 通道： | 530mA |
| 电流 - 峰值输出： | 3A |
| 电源电压： | 4 V ~ 6 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
IPS042G
31
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25 o C unless otherwise specified). PCB mounting uses the standard footprint with 70 μ m
copper thickness.
Symbol Parameter
Vds
Maximum drain to source voltage
Min.
—
Max.
47
Units
Test Conditions
Vin
Iin, max
Maximum input voltage
Maximum IN current
-0.3
-10
7
+10
V
mA
Isd cont.
Diode max. continuous current (1)
Maximum power dissipation
(for all Isd mosfets, rth=125 o C/W)
Isd pulsed Diode max. pulsed current (1)
(1)
P
d
(for all Pd mosfets, rth=125 o C/W)
—
—
—
1.2
3
1
A
W
ESD1
ESD2
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
—
—
4
0.5
kV
C=100pF, R=1500 ?,
C=200pF, R=0 ?, L=10 μ H
T stor.
Tj max.
Max. storage temperature
Max. junction temperature
-55
-40
150
+150
o
C
Thermal Characteristics
Symbol Parameter
Rth1
Thermal resistance with standard footprint
(2 mosfets on)
Min.
—
Typ.
100
Max. Units Test Conditions
—
Rth2
Thermal resistance with standard footprint
(1 mosfet on)
—
125
—
o
C/W
Rth3
Thermal resistance with 1" square footprint
(2 mosfets on)
—
65
—
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max)
Continuous Drain to Source voltage
—
35
VIH
VIL
High level input voltage
Low level input voltage
4
0
6
0.5
V
I ds
Continuous drain current (both mosfets at this current)
Tamb=85 C
o
TAmbient = 85 o C, IN = 5V, rth = 100 o C/W, Tj = 125 o C
—
0.53
A
Rin Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
1
—
5
1
k ?
μ S
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
2
www.irf.com
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