参数资料
型号: IR1168SPBF
厂商: International Rectifier
文件页数: 11/22页
文件大小: 0K
描述: IC MOSFET DRIVER DUAL 200V 8SOIC
标准包装: 95
配置: 半桥
输入类型: 非反相
延迟时间: 60ns
电流 - 峰: 1A
配置数: 1
输出数: 2
电源电压: 8.6 V ~ 18 V
工作温度: -25°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
IR1168S
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn
off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as close as
possible to the IR1168. This pin is not internally clamped.
GND: Ground
This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to
this point.
VD1 and VD2: Drain Voltage Sense
These are the two high-voltage pins used to sense the drain voltage of the two SR power MOSFETs. Routing
between the drain of the MOSFET and the IC pin must be particularly optimized.
VS1 and VS2: Source Voltage Sense
These are the two differential sense pins for the two source pins of the two SR power MOSFETs. This pin must
not be connected directly to the GND pin (pin 7) but must be used to create a kelvin contact as close as possible
to the power MOSFET source pin.
GATE1 and GATE2: Gate Drive Outputs
These are the two gate drive outputs of the IC. The gate voltage is internally clamped and has a +1A/-4A peak
drive capability. Although this pin can be directly connected to the synchronous rectifier (SR) MOSFET gate, the
use of gate resistor is recommended (specifically when putting multiple MOSFETs in parallel). Care must be taken
in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance.
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11
? 2009 International Rectifier
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参数描述
IR1168SPBF 制造商:International Rectifier 功能描述:Smart Rectifier Driver IC
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