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| 型号： | IR1168SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 13/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL 200V 8SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 60ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 8.6 V ~ 18 V |
| 工作温度： | -25°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
IR1168S
General Description
The IR1168 Dual Smart Rectifier controller IC is the industry first dedicated high-voltage controller IC for
synchronous rectification in resonant converter applications. The IC can emulate the operation of the two
secondary rectifier diodes by correctly driving the synchronous rectifier (SR) MOSFETs in the two secondary legs.
The core of this device are two high-voltage, high speed comparators which sense the drain to source voltage of
the MOSFETs differentially. The device current is sensed using the R DSON as a shunt resistance and the GATE pin
of the MOSFET is driven accordingly. Dedicated internal logic then manages to turn the power device on and off in
close proximity of the zero current transition.
IR1168 further simplifies synchronous rectifier control by offering the following power management features:
-Wide VCC operating range allows the IC to be directly powered from the converter output
-Shoot through protection logic that prevents both the GATE outputs from the IC to be high at the same time
-Device turn ON and OFF in close proximity of the zero current transition with low turn-on and turn-off propagation
delays; eliminates reactive power flow between the output capacitors and power transformer
-Internally clamped gate driver outputs that significantly reduce gate losses.
The SmartRectifier? control technique is based on sensing the voltage across the MOSFET and comparing it with
two negative thresholds to determine the turn on and off transitions for the device. The rectifier current is sensed
by the input comparators using the power MOSFET R DSON as a shunt resistance and its GATE is driven depending
on the level of the sensed voltage vs. the 3 thresholds shown below.
V Gate
V DS
V TH2
V TH1
V TH3
Figure 1: Input comparator thresholds
Turn-on phase
When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating
a negative V DS voltage across it. The body diode has generally a much higher voltage drop than the one caused by
the MOSFET on resistance and therefore will trigger the turn-on threshold V TH2 .
When V TH2 is triggered, IR1168 will drive the gate of MOSFET on which will in turn cause the conduction voltage
VDS to drop down to I D *R DSON . This drop is usually accompanied by some amount of ringing, that could trigger the
input comparator to turn off; hence, a fixed Minimum On Time (MOT) blanking period is used that will maintain the
power MOSFET on for a minimum amount of time.
The fixed MOT limits the minimum conduction time of the secondary rectifiers and hence, the maximum switching
frequency of the converter.
Turn-off phase
Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level where
V DS will cross the turn-off threshold V TH1 .
www.irf.com
13
? 2009 International Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR1168SPBF | 制造商:International Rectifier 功能描述:Smart Rectifier Driver IC |
| IR1168STRPBF | 功能描述:开关变换器、稳压器与控制器 Dual Smartrectifier Drvr IC RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR1169S | 制造商:IRF 制造商全称:International Rectifier 功能描述:ADVANCED SMARTRECTIFIER CONTROL IC |
| IR1169SPBF | 功能描述:功率驱动器IC ADV SmartRectifier 200V 10.7V 70ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR1169STRPBF | 功能描述:功率驱动器IC ADV SmartRectifier 200V 10.7V 70ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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